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  • Voltage - Rated
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    • FET Type
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    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 472
  • APTM10DSKM19T3G
    MOSFET 2N-CH 100V 70A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 70A
    • Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
    • Power - Max: 208W
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  • APTM20AM10STG
    MOSFET 2N-CH 200V 175A SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 175A
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
    • Power - Max: 694W
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  • VN0106N3-G-P003
    MOSFET N-CH 60V 350MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
    • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±20V
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  • VN0606L-G-P003
    MOSFET N-CH 60V 330MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
    • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MSC017SMA120B
    MOSFET SIC 1200V 17 MOHM TO-247
    Microchip Technology
    • Manufacturer: Microchip Technology
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  • TP0606N3-G-P003
    MOSFET P-CH 60V 320MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
    • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±20V
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  • TN0604N3-G-P013
    MOSFET N-CH 40V 700MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
    • Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
    • Vgs(th) (Max) @ Id: 1.6V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 740mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±20V
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  • APTM20HM20FTG
    MOSFET 4N-CH 200V 89A SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 89A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
    • Power - Max: 357W
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  • APTM50AM19FG
    MOSFET 2N-CH 500V 163A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 163A
    • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
    • Power - Max: 1136W
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  • VN2460N3-G
    MOSFET N-CH 600V 0.16A TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
    • Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 2mA
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • DN3545N3-G
    MOSFET N-CH 450V 0.136A TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92 (TO-226)
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 450V
    • Current - Continuous Drain (Id) @ 25°C: 136mA
    • Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 740mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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  • APTC60DDAM24T3G
    MOSFET 2N-CH 600V 95A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N Channel (Dual Buck Chopper)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 95A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 462W
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  • VN0104N3-G
    MOSFET N-CH 40V 350MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
    • Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±20V
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  • DN2450K4-G
    MOSFET N-CH 500V 350MA 3DPAK
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252, (D-Pak)
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
    • Rds On (Max) @ Id, Vgs: 10Ohm @ 300mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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  • DN2535N3-G-P003
    MOSFET N-CH 350V 0.12A TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92 (TO-226)
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
    • Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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