• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
• Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 0V
• Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 278A
• Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
• Vgs(th) (Max) @ Id: 4V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
• Power - Max: 780W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
• Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
• Vgs(th) (Max) @ Id: 3.2V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
• Power - Max: 602W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 1.6V @ 500µA
• Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 4 N-Channel (Three Level Inverter)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 219A (Tc)
• Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
• Power - Max: 925W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
• Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 740mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6-P
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
• Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V
• Power - Max: 625W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 46A
• Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
• Power - Max: 357W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
• Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 10mA
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 360mW (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: D-3 Module
• Supplier Device Package: D3
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
• Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V
• Power - Max: 625W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 51A
• Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
• Power - Max: 390W

• Manufacturer: Microchip Technology
• Frequency: 128MHz
• Voltage - Rated: 500V
• Current - Test: 15mA
• Power - Output: 900W
• Transistor Type: 2 N-Channel (Dual) Common Source
• Gain: 16dB
• Voltage - Test: 150V
• Current Rating (Amps): 10A

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP3
• Supplier Device Package: SP3
• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 37A
• Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
• Power - Max: 312W