• Manufacturer: Microchip Technology
• Package / Case: M177
• Supplier Device Package: M177
• Frequency: 150MHz
• Voltage - Rated: 170V
• Current - Test: 250mA
• Power - Output: 300W
• Transistor Type: N-Channel
• Gain: 25dB
• Voltage - Test: 50V
• Current Rating (Amps): 2mA

• Manufacturer: Microchip Technology

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92 (TO-226)
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 350V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
• Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: TO-243AA (SOT-89)
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
• Rds On (Max) @ Id, Vgs: 60Ohm @ 100mA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.3W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Package / Case: M177
• Supplier Device Package: M177
• Frequency: 150MHz
• Voltage - Rated: 170V
• Current - Test: 250mA
• Power - Output: 300W
• Transistor Type: N-Channel
• Gain: 25dB
• Voltage - Test: 50V
• Current Rating (Amps): 2mA

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP6C
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 538A (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-DFN (5x5)
• FET Type: 2 N-Channel (Dual)
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 1.1A
• Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 0V
• Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3F
• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
• Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
• Power - Max: 365W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP3F
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 125°C (TC)
• Package / Case: Module
• Supplier Device Package: SP3X
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
• Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10.7nF @ 50V
• Power - Max: 341W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP6-P
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
• Power - Max: 674W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x4)
• FET Type: 2 N and 2 P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 28A
• Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
• Power - Max: 277W

• Manufacturer: Microchip Technology
• Series: POWER MOS 7®
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP6-P
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C: 22A
• Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
• Power - Max: 390W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
• Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V