• Manufacturer: Microchip Technology
• Package / Case: M174
• Supplier Device Package: M174
• Frequency: 30MHz
• Voltage - Rated: 80V
• Current - Test: 250mA
• Power - Output: 150W
• Transistor Type: N-Channel
• Gain: 20dB
• Voltage - Test: 28V
• Current Rating (Amps): 20A

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3F
• FET Type: 2 N-Channel (Dual) Common Source
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
• Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
• Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
• Power - Max: 862W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: LP8
• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 280A (Tc)

• Manufacturer: Microchip Technology
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264
• Frequency: 45MHz
• Voltage - Rated: 500V
• Current - Test: 250µA
• Power - Output: 350W
• Transistor Type: N-Channel
• Gain: 16dB
• Voltage - Test: 150V
• Current Rating (Amps): 30A

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• FET Type: 6 N-Channel (Phase Leg)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
• Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
• Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
• Power - Max: 843W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 60A
• Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
• Power - Max: 1250W

• Manufacturer: Microchip Technology
• Package / Case: TO-247-3
• Supplier Device Package: TO-247
• Frequency: 40.68MHz
• Voltage - Rated: 1200V
• Power - Output: 150W
• Transistor Type: N-Channel
• Gain: 15dB
• Voltage - Test: 300V
• Current Rating (Amps): 6A

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP1
• Supplier Device Package: SP1
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 49A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Power - Max: 250W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6-P
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 28A
• Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
• Power - Max: 277W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
• Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id: 4V @ 15mA
• Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
• Power - Max: 375W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 208A
• Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
• Power - Max: 781W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP1
• Supplier Device Package: SP1
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 49A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Power - Max: 250W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 6.25W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
• Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 400mW (Ta), 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±30V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 350V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
• Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 15W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V