- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VRF141 | MOSFET RF PWR N-CH 28V 150W M174 | Microchip Technology | M174 | 150W | 30MHz | 80V | 20A | M174 | N-Channel | 20dB | 28V | 250mA | ||||||||||||||||
| MSCSM170DUM15T3AG | PM-MOSFET-SIC-SP3F | Microchip Technology | SP3F | 862W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) Common Source | 1700V (1.7kV) | 181A (Tc) | Silicon Carbide (SiC) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | |||||||||||||
| MSCM20AM058G | PM-MOSFET-FREDFET-5-LP8 | Microchip Technology | LP8 | Chassis Mount | Module | 2 N Channel (Phase Leg) | 200V | 280A (Tc) | Standard | |||||||||||||||||||
| ARF469BG | RF MOSFET N-CHANNEL 150V TO-264 | Microchip Technology | TO-264 | 350W | 45MHz | 500V | 30A | TO-264-3, TO-264AA | N-Channel | 16dB | 150V | 250µA | ||||||||||||||||
| MSCSM170TAM15CTPAG | PM-MOSFET-SIC-SBD-SP6P | Microchip Technology | 843W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (Phase Leg) | 1700V (1.7kV) | 179A (Tc) | Silicon Carbide (SiC) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | ||||||||||||||
| APTM120A15FG | MOSFET 2N-CH 1200V 60A SP6 | Microchip Technology | SP6 | 1250W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 60A | Standard | 175mOhm @ 30A, 10V | 5V @ 10mA | 748nC @ 10V | 20600pF @ 25V | |||||||||||||
| ARF465AG | RF PWR MOSFET 1200V 6A TO-247 | Microchip Technology | TO-247 | 150W | 40.68MHz | 1200V | 6A | TO-247-3 | N-Channel | 15dB | 300V | |||||||||||||||||
| APTC60AM45T1G | MOSFET 2N-CH 600V 49A SP1 | Microchip Technology | SP1 | 250W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 600V | 49A | Standard | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | |||||||||||||
| APTC80TA15PG | MOSFET 6N-CH 800V 28A SP6P | Microchip Technology | SP6-P | 277W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 800V | 28A | Standard | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||||||||||||
| APTMC120TAM34CT3AG | POWER MODULE - SIC MOSFET | Microchip Technology | SP3 | 375W | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 74A (Tc) | Silicon Carbide (SiC) | 34mOhm @ 50A, 20V | 4V @ 15mA | 161nC @ 5V | 2788pF @ 1000V | |||||||||||||
| APTM20HM08FG | MOSFET 4N-CH 200V 208A SP6 | Microchip Technology | SP6 | 781W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 200V | 208A | Standard | 10mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | |||||||||||||
| APTC60HM45T1G | MOSFET 4N-CH 600V 49A SP1 | Microchip Technology | SP1 | 250W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 600V | 49A | Standard | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | |||||||||||||
| 2N6660 | MOSFET N-CH 60V 0.41A TO39-3 | Microchip Technology | TO-39 | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 6.25W (Tc) | 60V | 410mA (Ta) | 3Ohm @ 1A, 10V | 5V, 10V | 2V @ 1mA | 50pF @ 24V | ±20V | ||||||||||||
| VN2222LL-G-P013 | MOSFET N-CH 60V 0.23A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 400mW (Ta), 1W (Tc) | 60V | 230mA (Tj) | 7.5Ohm @ 500mA, 10V | 5V, 10V | 2.5V @ 1mA | 60pF @ 25V | ±30V | ||||||||||||
| DN2535N5-G | MOSFET N-CH 350V 500MA TO220-3 | Microchip Technology | TO-220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 15W (Tc) | 350V | 500mA (Tj) | Depletion Mode | 25Ohm @ 120mA, 0V | 0V | 300pF @ 25V | ±20V |
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