- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VRF154FL | MOSFET RF PWR N-CH 50V 600W T2 | Microchip Technology | T2 | 600W | 80MHz | 170V | 4mA | T2 | N-Channel | 17dB | 50V | 800mA | ||||||||||||||||
| MSC015SMA070S | GEN2 SIC MOSFET 700V 15MOHM D3PA | Microchip Technology | D3Pak | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | N-Channel | 700V | 166A | ||||||||||||||||||
| LND150N3-G-P003 | MOSFET N-CH 500V 30MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 740mW (Ta) | 500V | 30mA (Tj) | Depletion Mode | 1000Ohm @ 500µA, 0V | 0V | 10pF @ 25V | ±20V | ||||||||||||
| MCP87050T-U/MF | MOSFET N-CH 25V 8PDFN | Microchip Technology | 8-PDFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.2W (Ta) | 25V | 100A (Tc) | 5mOhm @ 20A, 10V | 4.5V, 10V | 1.6V @ 250µA | 15nC @ 4.5V | 1040pF @ 12.5V | +10V, -8V | |||||||||||
| APTC60HM45SCTG | MOSFET 4N-CH 600V 49A SP4 | Microchip Technology | SP4 | 250W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 600V | 49A | Super Junction | 45mOhm @ 22.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | CoolMOS™ | ||||||||||||
| APTM50HM75FTG | MOSFET 4N-CH 500V 46A SP4 | Microchip Technology | SP4 | 357W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 46A | Standard | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | |||||||||||||
| MIC94053YC6-TR | MOSFET P-CH 6V 2A SC70-6 | Microchip Technology | SC-70-6 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | P-Channel | 270mW (Ta) | 6V | 2A (Ta) | 84mOhm @ 100mA, 4.5V | 1.8V, 4.5V | 1.2V @ 250µA | -6V | |||||||||||||
| APTM50AM38FTG | MOSFET 2N-CH 500V 90A SP4 | Microchip Technology | SP4 | 694W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 500V | 90A | Standard | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | POWER MOS 7® | ||||||||||||
| ARF1510 | MOSFET RF N-CH 1000V 8A T1 | Microchip Technology | T-1 | 750W | 40.7MHz | 1000V | 8A | T-1 | N-Channel | 15dB | 400V | |||||||||||||||||
| APTC80H15T3G | MOSFET 4N-CH 800V 28A SP3 | Microchip Technology | SP3 | 277W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 800V | 28A | Standard | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||||||||||||
| VN2210N3-G | MOSFET N-CH 100V 1.2A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 740mW (Tc) | 100V | 1.2A (Tj) | 350mOhm @ 4A, 10V | 5V, 10V | 2.4V @ 10mA | 500pF @ 25V | ±20V | ||||||||||||
| MIC94051YM4-TR | MOSFET P-CH 6V 1.8A 8MSOP | Microchip Technology | SOT-143 | Surface Mount | TO-253-4, TO-253AA | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | P-Channel | 568mW (Ta) | 6V | 1.8A (Ta) | 160mOhm @ 100mA, 4.5V | 1.8V, 4.5V | 1.2V @ 250µA | 600pF @ 5.5V | -6V | SymFET™ | |||||||||||
| MSCSM120TLM08CAG | PM-MOSFET-SIC-SBD-SP6C | Microchip Technology | SP6C | 1378W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel (Three Level Inverter) | 1200V (1.2kV) | 333A (Tc) | Silicon Carbide (SiC) | 7.8mOhm @ 80A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12000pF @ 1000V | |||||||||||||
| ARF466AG | RF FET N CH 1000V 13A TO264 | Microchip Technology | TO-264 | 300W | 40.68MHz | 1000V | 13A | TO-264-3, TO-264AA | N-Channel | 16dB | 150V | |||||||||||||||||
| MCP87055T-U/LC | MOSFET N-CH 25V 8PDFN | Microchip Technology | 8-PDFN (3x3) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.8W (Ta) | 25V | 60A (Tc) | 6mOhm @ 20A, 10V | 4.5V, 10V | 1.7V @ 250µA | 14nC @ 4.5V | 890pF @ 12.5V | +10V, -8V |
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