• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 6V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 84mOhm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 270mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs (Max): -6V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92 (TO-226)
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 350V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
• Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP3
• Supplier Device Package: SP3
• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 45A
• Rds On (Max) @ Id, Vgs: 150mOhm @ 22.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 2.5mA
• Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
• Power - Max: 568W

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: TO-243AA (SOT-89)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
• Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 2mA
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.6W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
• Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±30V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP1
• Supplier Device Package: SP1
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 25A
• Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
• Power - Max: 208W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
• Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Series: CoolMOS™
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 143A
• Rds On (Max) @ Id, Vgs: 18mOhm @ 71.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
• Power - Max: 833W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• FET Type: 2 N-Channel (Dual) Common Source
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
• Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
• Power - Max: 2031W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227 (ISOTOP®)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1.2kV
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 278W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs (Max): +25V, -10V

• Manufacturer: Microchip Technology
• Package / Case: TO-247-3
• Supplier Device Package: TO-247
• Frequency: 81.36MHz
• Voltage - Rated: 450V
• Power - Output: 90W
• Transistor Type: N-Channel
• Gain: 13dB
• Voltage - Test: 150V
• Current Rating (Amps): 9A

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3
• FET Type: 2 N-Channel (Dual)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id: 3V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
• Power - Max: 125W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
• Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP1
• Supplier Device Package: SP1
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
• Power - Max: 208W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP4
• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
• Power - Max: 674W (Tc)