- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MIC94053BC6-TR | MOSFET P-CH 6V 2A SC70-6 | Microchip Technology | SC-70-6 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | P-Channel | 270mW (Ta) | 6V | 2A (Ta) | 84mOhm @ 100mA, 4.5V | 1.8V, 4.5V | 1.2V @ 250µA | -6V | |||||||||||||
| DN2535N3-G | MOSFET N-CH 350V 0.12A TO92-3 | Microchip Technology | TO-92 (TO-226) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 350V | 120mA (Tj) | Depletion Mode | 25Ohm @ 120mA, 0V | 0V | 300pF @ 25V | ±20V | ||||||||||||
| APTML602U12R020T3AG | MOSFET 2N-CH 600V 45A SP3 | Microchip Technology | SP3 | 568W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 600V | 45A | Standard | 150mOhm @ 22.5A, 10V | 4V @ 2.5mA | 7600pF @ 25V | ||||||||||||||
| VN2460N8-G | MOSFET N-CH 600V 0.2A SOT89-3 | Microchip Technology | TO-243AA (SOT-89) | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.6W (Ta) | 600V | 200mA (Tj) | 20Ohm @ 100mA, 10V | 4.5V, 10V | 4V @ 2mA | 150pF @ 25V | ±20V | ||||||||||||
| VN10KN3-G-P002 | MOSFET N-CH 60V 310MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 60V | 310mA (Tj) | 5Ohm @ 500mA, 10V | 5V, 10V | 2.5V @ 1mA | 60pF @ 25V | ±30V | ||||||||||||
| APTM50H15FT1G | MOSFET 4N-CH 500V 25A SP1 | Microchip Technology | SP1 | 208W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 25A | Standard | 180mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | 5448pF @ 25V | |||||||||||||
| VN2106N3-G | MOSFET N-CH 60V 300MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 60V | 300mA (Tj) | 4Ohm @ 500mA, 10V | 5V, 10V | 2.4V @ 1mA | 50pF @ 25V | ±20V | ||||||||||||
| APTC60AM18SCG | MOSFET 2N-CH 600V 143A SP6 | Microchip Technology | SP6 | 833W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 600V | 143A | Standard | 18mOhm @ 71.5A, 10V | 3.9V @ 4mA | 1036nC @ 10V | 28000pF @ 25V | CoolMOS™ | ||||||||||||
| MSCSM120DUM042AG | PM-MOSFET-SIC-SP6C | Microchip Technology | 2031W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 495A (Tc) | Silicon Carbide (SiC) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1000V | ||||||||||||||
| MSC025SMA120J | GEN2 SIC MOSFET 1200V 25MOHM SOT | Microchip Technology | SOT-227 (ISOTOP®) | Chassis Mount | SOT-227-4, miniBLOC | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | N-Channel | 278W (Tc) | 1.2kV | 77A (Tc) | 31mOhm @ 40A, 20V | 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | +25V, -10V | |||||||||||
| ARF449BG | RF PWR MOSFET 450V TO-247 | Microchip Technology | TO-247 | 90W | 81.36MHz | 450V | 9A | TO-247-3 | N-Channel | 13dB | 150V | |||||||||||||||||
| APTMC120HR11CT3AG | POWER MODULE - SIC MOSFET | Microchip Technology | SP3 | 125W | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 26A (Tc) | Silicon Carbide (SiC) | 98mOhm @ 20A, 20V | 3V @ 5mA | 62nC @ 20V | 950pF @ 1000V | |||||||||||||
| VN2450N3-G | MOSFET N-CH 500V 0.2A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Ta) | 500V | 200mA (Tj) | 13Ohm @ 400mA, 10V | 4.5V, 10V | 4V @ 1mA | 150pF @ 25V | ±20V | ||||||||||||
| APTM120H140FT1G | MOSFET 4N-CH 1200V 8A SP1 | Microchip Technology | SP1 | 208W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | 8A | Standard | 1.68Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | 3812pF @ 25V | |||||||||||||
| MSCSM70VM10C4AG | PM-MOSFET-SIC-SBD~-SP4 | Microchip Technology | SP4 | 674W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 700V | 238A (Tc) | Silicon Carbide (SiC) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V |
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