• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 472
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
APTC80H29SCTG MOSFET 4N-CH 800V 15A SP4 Microchip Technology SP4 156W Chassis Mount SP4 -40°C ~ 150°C (TJ) 4 N-Channel (Half Bridge) 800V 15A Standard 290mOhm @ 7.5A, 10V 3.9V @ 1mA 91nC @ 10V 2254pF @ 25V
LND250K1-G MOSFET N-CH 500V 0.013A SOT23-3 Microchip Technology SOT-23 (TO-236AB) Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 360mW (Ta) 500V 13mA (Tj) Depletion Mode 1000Ohm @ 500µA, 0V 0V 10pF @ 25V ±20V
TN0106N3-G-P013 MOSFET N-CH 60V 350MA TO92-3 Microchip Technology TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1W (Tc) 60V 350mA (Tj) 3Ohm @ 500mA, 10V 4.5V, 10V 2V @ 500µA 60pF @ 25V ±20V
VN0550N3-G MOSFET N-CH 500V 50MA TO92-3 Microchip Technology TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1W (Tc) 500V 50mA (Tj) 60Ohm @ 50mA, 10V 5V, 10V 4V @ 1mA 55pF @ 25V ±20V
VP0104N3-G MOSFET P-CH 40V 0.25A TO92-3 Microchip Technology TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1W (Tc) 40V 250mA (Tj) 8Ohm @ 500mA, 10V 5V, 10V 3.5V @ 1mA 60pF @ 25V ±20V
MIC94031CYW MOSFET P-CHANNEL 16V 1A Microchip Technology MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 568mW (Ta) 16V 1A (Ta) 450mOhm @ 100mA, 10V 1.4V @ 250µA TinyFET®
VN2450N8-G MOSFET N-CH 500V 0.25A SOT89-3 Microchip Technology TO-243AA (SOT-89) Surface Mount TO-243AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.6W (Ta) 500V 250mA (Tj) 13Ohm @ 400mA, 10V 4.5V, 10V 4V @ 1mA 150pF @ 25V ±20V
APTM50AM24SG MOSFET 2N-CH 500V 150A SP6 Microchip Technology SP6 1250W Chassis Mount SP6 -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 500V 150A Standard 28mOhm @ 75A, 10V 5V @ 6mA 434nC @ 10V 19600pF @ 25V
APTM100TA35FPG MOSFET 6N-CH 1000V 22A SP6-P Microchip Technology SP6-P 390W Chassis Mount SP6 -40°C ~ 150°C (TJ) 6 N-Channel (3-Phase Bridge) 1000V (1kV) 22A Standard 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V
MSCSM70AM10CT3AG PM-MOSFET-SIC-SBD~-SP3F Microchip Technology SP3F 690W (Tc) Chassis Mount Module -40°C ~ 175°C (TJ) 2 N Channel (Phase Leg) 700V 241A (Tc) Silicon Carbide (SiC) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V
APTC60DDAM45T1G MOSFET 2N-CH 600V 49A SP1 Microchip Technology SP1 250W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N Channel (Dual Buck Chopper) 600V 49A Super Junction 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V CoolMOS™
TP5335K1-G MOSFET P-CH 350V 0.085A SOT23-3 Microchip Technology TO-236AB (SOT23) Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C P-Channel 360mW (Ta) 350V 85mA (Tj) 30Ohm @ 200mA, 10V 4.5V, 10V 2.4V @ 1mA 110pF @ 25V ±20V
MSCSM120HM50CT3AG PM-MOSFET-SIC-SBD~-SP3F Microchip Technology SP3F 245W (Tc) Chassis Mount Module -40°C ~ 175°C (TJ) 4 N-Channel 1200V (1.2kV) 55A (Tc) Silicon Carbide (SiC) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V
APTM120H29FG MOSFET 4N-CH 1200V 34A SP6 Microchip Technology SP6 780W Chassis Mount SP6 -40°C ~ 150°C (TJ) 4 N-Channel (Half Bridge) 1200V (1.2kV) 34A Standard 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V POWER MOS 7®
TP2540N3-G-P002 MOSFET P-CH 400V 0.086A TO92-3 Microchip Technology TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 740mW (Ta) 400V 86mA (Tj) 25Ohm @ 100mA, 10V 4.5V, 10V 2.4V @ 1mA 125pF @ 25V ±20V
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