• Manufacturer: Microchip Technology
• Series: POWER MOS V®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3 [S]
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 370W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C: 43A
• Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
• Power - Max: 780W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP3
• Supplier Device Package: SP3
• FET Type: 4 N-Channel (Three Level Inverter)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
• Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
• Power - Max: 250W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 72A
• Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Power - Max: 416W

• Manufacturer: Microchip Technology
• Series: TinyFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 16V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 100mA, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 568mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
• Vgs (Max): 16V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
• Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs (Max): ±30V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6-P
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 72A
• Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
• Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Power - Max: 416W

• Manufacturer: Microchip Technology
• Series: CoolMOS™
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP1
• Supplier Device Package: SP1
• FET Type: 3 N Channel (Phase Leg + Boost Chopper)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 49A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Power - Max: 250W

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: TO-243AA (SOT-89)
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 350V
• Current - Continuous Drain (Id) @ 25°C: 135mA (Tj)
• Rds On (Max) @ Id, Vgs: 35Ohm @ 150mA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.3W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP6-P
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
• Power - Max: 728W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C: 65A
• Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
• Power - Max: 1250W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3F
• FET Type: 2 N-Channel (Dual) Common Source
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
• Power - Max: 690W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 104A
• Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
• Power - Max: 390W

• Manufacturer: Microchip Technology
• Package / Case: M174
• Supplier Device Package: M174
• Frequency: 150MHz
• Voltage - Rated: 170V
• Current - Test: 250mA
• Power - Output: 150W
• Transistor Type: N-Channel
• Gain: 11dB
• Voltage - Test: 50V
• Current Rating (Amps): 1mA

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3F
• FET Type: 4 N-Channel
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
• Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
• Power - Max: 365W (Tc)