Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Honeywell Aerospace

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
  • HTNFET-D
    MOSFET N-CH 55V 8-DIP
    Honeywell Aerospace
    • Manufacturer: Honeywell Aerospace
    • Series: HTMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: 8-CDIP Exposed Pad
    • Supplier Device Package: 8-CDIP-EP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
    • Vgs(th) (Max) @ Id: 2.4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): -10V
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  • HTNFET-DC
    MOSFET N-CH 55V 8-DIP
    Honeywell Aerospace
    • Manufacturer: Honeywell Aerospace
    • Series: HTMOS™
    • Mounting Type: Through Hole
    • Package / Case: 8-CDIP Exposed Pad
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
    • Vgs(th) (Max) @ Id: 2.4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): -10V
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  • HTNFET-T
    MOSFET N-CH 55V 4-PIN
    Honeywell Aerospace
    • Manufacturer: Honeywell Aerospace
    • Series: HTMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: 4-SIP
    • Supplier Device Package: 4-Power Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
    • Vgs(th) (Max) @ Id: 2.4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): -10V
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  • HTNFET-TC
    MOSFET N-CH 55V 4-PIN
    Honeywell Aerospace
    • Manufacturer: Honeywell Aerospace
    • Series: HTMOS™
    • Mounting Type: Through Hole
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
    • Vgs(th) (Max) @ Id: 2.4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): -10V
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  • 10
  • 15
  • 50
  • 100