Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single GeneSiC Semiconductor

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 28
  • GA16JT17-247
    TRANS SJT 1700V 16A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 282W (Tc)
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  • GA08JT17-247
    TRANS SJT 1700V 8A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
    • Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 48W (Tc)
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  • GA10SICP12-263
    TRANS SJT 1200V 25A TO263-7
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK (7-Lead)
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
    • Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 170W (Tc)
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  • 2N7639-GA
    TRANS SJT 650V 15A TO-257
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-257-3
    • Supplier Device Package: TO-257
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C)
    • Rds On (Max) @ Id, Vgs: 105mOhm @ 15A
    • Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 172W (Tc)
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  • GA10JT12-263
    TRANS SJT 1200V 25A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 175°C (TJ)
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
    • Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
    • Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 170W (Tc)
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  • GA100JT12-227
    TRANS SJT 1200V 160A SOT227
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 535W (Tc)
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  • GA20SICP12-247
    TRANS SJT 1200V 45A TO247
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 20A
    • Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 282W (Tc)
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  • 2N7638-GA
    TRANS SJT 650V 8A TO276
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-276AA
    • Supplier Device Package: TO-276
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
    • Rds On (Max) @ Id, Vgs: 170mOhm @ 8A
    • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 200W (Tc)
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  • GA05JT12-247
    TRANS SJT 1200V 5A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 5A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 106W (Tc)
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  • GA50JT06-258
    TRANS SJT 600V 100A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-258-3, TO-258AA
    • Supplier Device Package: TO-258
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 50A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 769W (Tc)
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  • GA03JT12-247
    TRANS SJT 1200V 3A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C)
    • Rds On (Max) @ Id, Vgs: 460mOhm @ 3A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 15W (Tc)
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  • GA06JT12-247
    TRANS SJT 1200V 6A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 6A
    • Technology: SiC (Silicon Carbide Junction Transistor)
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  • GA50JT12-263
    TRANSISTOR 1200V 100A TO263-7
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
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  • GA05JT01-46
    TRANS SJT 100V 9A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-46-3
    • Supplier Device Package: TO-46
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 5A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 20W (Tc)
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  • GA100JT17-227
    TRANS SJT 1700V 160A SOT227
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 535W (Tc)
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