Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS Integrated Circuits Division

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 22
  • CPC3730C
    MOSFET N-CH 350V SOT89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.6W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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  • CPC3703C
    MOSFET N-CH 250V 360MA SOT-89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89-3
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
    • Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.6W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3710CTR
    MOSFET N-CH 250V SOT89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 250V
    • Rds On (Max) @ Id, Vgs: 10Ohm @ 220mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.4W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3902ZTR
    MOSFET N-CH 250V SOT-223
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 110°C (TA)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 250V
    • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3960ZTR
    MOSFET N-CH 600V SOT-223
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 600V
    • Rds On (Max) @ Id, Vgs: 44Ohm @ 100mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3701C
    MOSFET N-CH 60V SOT89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 60V
    • Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 0V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3708CTR
    MOSFET N-CH 350V 0.005A SOT-89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 110°C (TA)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
    • Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): -0.35V
    • Vgs (Max): ±20V
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  • CPC3720CTR
    MOSFET N-CH DEPLETION 350V SOT89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Rds On (Max) @ Id, Vgs: 22Ohm @ 130mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • CPC3714C
    MOSFET N-CH 350V SOT89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Rds On (Max) @ Id, Vgs: 14Ohm @ 240mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.4W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3703CTR
    MOSFET N-CH 250V 360MA SOT-89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TA)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89-3
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
    • Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3982TTR
    MOSFET N-CH 800V SOT-23
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 110°C (TA)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 800V
    • Rds On (Max) @ Id, Vgs: 380Ohm @ 20mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3701CTR
    MOSFET N-CH 60V SOT89
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 60V
    • Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 0V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±15V
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  • CPC3708ZTR
    MOSFET N-CH 350V 0.005A SOT-223
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 110°C (TA)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
    • Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): -0.35V
    • Vgs (Max): ±20V
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  • CPC5602CTR
    MOSFET N-CH 350V 5MA SOT-223
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 85°C (TA)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
    • Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): -0.35V
    • Vgs (Max): ±20V
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  • CPC5603CTR
    MOSFET N-CH 415V 5MA SOT-223
    IXYS Integrated Circuits Division
    • Manufacturer: IXYS Integrated Circuits Division
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 85°C (TA)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 415V
    • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
    • Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): -0.35V
    • Vgs (Max): ±20V
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