Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single EPC

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 74
  • EPC2212
    AEC-Q101 GAN FET 100V 13.5 MOHM
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
    • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 407pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC8004
    GANFET TRANS 40V 2.7A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2040
    GANFET NCH 15V 3.4A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 15V
    • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 6V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2100ENGRT
    GANFET 2 N-CH 30V 9.5A/38A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
    • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
    • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2206
    GANFET N-CH 80V 90A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 13mA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 40V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2032
    GANFET TRANS 100V 48A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
    • Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 11mA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2016
    GANFET TRANS 100V 11A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 125°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2052
    TRANS GAN 100V DIE 16MOHM
    EPC
    • Manufacturer: EPC
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2104ENGRT
    GANFET 2NCH 100V 23A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 23A
    • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2221
    TRANS GAN DUAL 100V.11OHM 9BMPD
    EPC
    • Manufacturer: EPC
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Dual) Common Source
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 5A
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2015C
    GANFET TRANS 40V 33A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
    • Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 9mA
    • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2030ENGRT
    GANFET NCH 40V 31A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 16mA
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2107
    GANFET 3 N-CH 100V 9BGA
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: 9-VFBGA
    • Supplier Device Package: 9-BGA (1.35x1.35)
    • FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
    • Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2019
    GAN TRANS 200V 8.5A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • EPC2021ENGR
    TRANS GAN 80V 60A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 14mA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100