• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 74
  • EPC2015
    GANFET TRANS 40V 33A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (11-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
    • Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 9mA
    • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
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  • EPC2031ENGRT
    GANFET NCH 60V 31A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 15mA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2034C
    TRANS GAN 200V 8MOHM DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 7mA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 100V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2216
    AEC-Q101 GAN FET 15 V
    EPC
    • Manufacturer: EPC
    • Series: Automotive, AEC-Q101, eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 15V
    • Current - Continuous Drain (Id) @ 25°C: 10mA (Ta)
    • Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
    • Vgs(th) (Max) @ Id: 1V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 118pF @ 7.5V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2033
    GAN TRANS 150V 7MOHM BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 9mA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
    • Technology: GaNFET (Gallium Nitride)
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  • EPC2021
    GANFET TRANS 80V 90A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 14mA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 40V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2038
    GAN TRANS 100V 2.8OHM BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
    • Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 20µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2014C
    GANFET TRANS 40V 10A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (5-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2034
    GANFET TRANS 200V 48A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 7mA
    • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2051
    GANFET TRANS 100V DIE CU PILLAR
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2110
    GANFET 2NCH 120V 3.4A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Dual) Common Source
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 120V
    • Current - Continuous Drain (Id) @ 25°C: 3.4A
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 700µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
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  • EPC2025
    GAN TRANS 300V 150MO BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2037
    GAN TRANS 100V 550MOHM BUMPED DI
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 80µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC8010
    GAN TRANS 100V 2.7A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2035
    GANFET TRANS 60V 1A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 800µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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