• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 74
  • EPC2001
    GANFET TRANS 100V 25A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 125°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (11-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
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  • EPC2106
    GANFET TRANS SYM 100V BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 600µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
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  • EPC2012
    GANFET TRANS 200V 3A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 125°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 145pF @ 100V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
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  • EPC2014
    GANFET TRANS 40V 10A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (5-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
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  • EPC8009
    GANFET TRANS 65V 2.7A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 65V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2007
    GANFET TRANS 100V 6A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 125°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (5-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
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  • EPC2022
    GAN TRANS 100V 3MOHM BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 12mA
    • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2106ENGRT
    GAN TRANS 2N-CH 100V BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 600µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
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  • EPC2111
    GAN TRANS ASYMMETRICAL HALF BRID
    EPC
    • Manufacturer: EPC
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V
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  • EPC2045
    GANFET TRANS 100V BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2105
    GAN TRANS ASYMMETRICAL HALF BRID
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
    • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
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  • EPC2102ENGRT
    GANFET 2 N-CHANNEL 60V 23A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 7mA
    • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
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  • EPC2024
    GANFET NCH 40V 60A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
    • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 19mA
    • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2202
    GANFET N-CH 80V 18A DIE
    EPC
    • Manufacturer: EPC
    • Series: Automotive, AEC-Q101, eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (6-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 18A
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +5.75V, -4V
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  • EPC2108
    GANFET 3 N-CH 60V/100V 9BGA
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: 9-VFBGA
    • Supplier Device Package: 9-BGA (1.35x1.35)
    • FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 60V, 100V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
    • Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
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