Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Goford Semiconductor

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 6
  • G4616
    N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOP
    • FET Type: N and P-Channel Complementary
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
    • Power - Max: 2W (Tc), 2.8W (Tc)
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  • G4953S
    P+P -30V,RD(MAX)<60M@-10V,RD(MAX
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
    • Power - Max: 2.5W (Tc)
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  • G20N06D52
    N60V,RD(MAX)<30M@10V,RD(MAX)<40M
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-DFN (4.9x5.75)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 30V
    • Power - Max: 45W (Ta)
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  • G33N03D3
    N30V,RD(MAX)<12M@10V,RD(MAX)<13M
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-DFN (3x3)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 1.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
    • Power - Max: 20W (Tc)
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  • G06NP06S2
    N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOP
    • FET Type: N and P-Channel
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
    • Power - Max: 2W (Tc), 2.5W (Tc)
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  • GT090N06D52
    N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-DFN (4.9x5.75)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 30V
    • Power - Max: 62W (Tc)
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