Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Littelfuse Inc.

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 5
  • LSIC1MO170E1000
    MOSFET SIC 1700V N-CH TO-247-3L
    Littelfuse Inc.
    • Manufacturer: Littelfuse Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3L
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 54W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
    • Vgs (Max): +22V, -6V
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  • LSIC1MO120E0160
    SIC MOSFET 1200V 22A TO247-3
    Littelfuse Inc.
    • Manufacturer: Littelfuse Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +22V, -6V
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  • LSIC1MO120E0120
    SIC MOSFET 1200V 27A TO247-3
    Littelfuse Inc.
    • Manufacturer: Littelfuse Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 7mA
    • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 139W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +22V, -6V
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  • SYC0102BLT1G
    SCR 0.25A GATE SCR
    Littelfuse Inc.
    • Manufacturer: Littelfuse Inc.
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  • LSIC1MO120E0080
    MOSFET SIC 1200V 39A TO247-3
    Littelfuse Inc.
    • Manufacturer: Littelfuse Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 179W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +22V, -6V
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