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  • Voltage - Rated
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    • Voltage - Test
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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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List Table
Found: 46889
  • IRL540S
    MOSFET N-CH 100V 28A D2PAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
    • Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
    • Vgs (Max): ±10V
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  • IPSA70R750P7SAKMA1
    MOSFET COOLMOS 700V TO251-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ P7
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: PG-TO251-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 70µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V
    • Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 34.7W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±16V
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  • IRF5805
    MOSFET P-CH 30V 3.8A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: Micro6™(TSOP-6)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 511pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • DMC2025UFDBQ-7
    MOSFET BVDSS: 8V~24V U-DFN2020-6
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-UDFN Exposed Pad
    • Supplier Device Package: U-DFN2020-6 (Type B)
    • FET Type: N and P-Channel Complementary
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
    • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
    • Power - Max: 700mW (Ta)
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  • PH4030AL,115
    MOSFET N-CH 30V 100A LFPAK
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: TrenchMOS™
    • Mounting Type: Surface Mount
    • Package / Case: SC-100, SOT-669
    • Supplier Device Package: LFPAK56, Power-SO8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 2.15V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V
    • Technology: MOSFET (Metal Oxide)
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  • BLC10G18XS-320AVTY
    RF TRANSISTOR 320W 6LD SOT1258-4
    Ampleon USA Inc.
    • Manufacturer: Ampleon USA Inc.
    • Series: BLC
    • Package / Case: SOT-1258-7
    • Supplier Device Package: SOT-1258-7
    • Frequency: 1.805GHz ~ 1.88GHz
    • Transistor Type: LDMOS
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  • 6LN04CH-TL-E-ON
    N-CHANNEL SILICON MOSFET
    onsemi
    • Manufacturer: onsemi
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  • PMPB27EP,115
    MOSFET P-CH 30V 6.1A 6DFN
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-UDFN Exposed Pad
    • Supplier Device Package: DFN2020MD-6
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
    • Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • STB6N60M2
    MOSFET N-CH 600V D2PAK
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: MDmesh™ II Plus
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 232pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 60W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±25V
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  • SPB100N03S2-03 G
    MOSFET N-CH 30V 100A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-3-2
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPP80N06S3L-08
    MOSFET N-CH 55V 80A TO-220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 55µA
    • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6475pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 105W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±16V
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  • FQPF9N50CYDTU
    MOSFET N-CH 500V 9A TO-220F
    onsemi
    • Manufacturer: onsemi
    • Series: QFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Formed Leads
    • Supplier Device Package: TO-220F-3 (Y-Forming)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
    • Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 44W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • DMN60H080DS-13
    MOSFET N-CH 600V 80MA SOT23
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
    • Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SSM3J35AMFV,L3F
    X34 SMALL LOW ON RESISTANCE PCH
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: U-MOSVII
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C
    • Package / Case: SOT-723
    • Supplier Device Package: VESM
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 100µA
    • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
    • Vgs (Max): ±10V
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  • 2SK3617-S-TL-E
    NCH 4V DRIVE SERIES
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
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