- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLC10G18XS-320AVTY | RF TRANSISTOR 320W 6LD SOT1258-4 | Ampleon USA Inc. | SOT-1258-7 | 1.805GHz ~ 1.88GHz | SOT-1258-7 | LDMOS | BLC | ||||||||||||||||||||||
| DMN60H080DS-13 | MOSFET N-CH 600V 80MA SOT23 | Diodes Incorporated | SOT-23-3 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.1W (Ta) | 600V | 80mA (Ta) | 100Ohm @ 60mA, 10V | 4.5V, 10V | 3V @ 250µA | 1.7nC @ 10V | 25pF @ 25V | ±20V | ||||||||||||
| DMC2025UFDBQ-7 | MOSFET BVDSS: 8V~24V U-DFN2020-6 | Diodes Incorporated | U-DFN2020-6 (Type B) | 700mW (Ta) | Surface Mount | 6-UDFN Exposed Pad | -55°C ~ 150°C (TJ) | N and P-Channel Complementary | 20V | 6A (Ta), 3.5A (Ta) | Standard | 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V | 1V @ 250µA, 1.4V @ 250µA | 12.3nC @ 10V, 15nC @ 8V | 486pF @ 10V, 642pF @ 10V | Automotive, AEC-Q101 | |||||||||||||
| IPSA70R750P7SAKMA1 | MOSFET COOLMOS 700V TO251-3 | Infineon Technologies | PG-TO251-3 | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 34.7W (Tc) | 700V | 6.5A (Tc) | 750mOhm @ 1.4A, 10V | 10V | 3.5V @ 70µA | 8.3nC @ 400V | 306pF @ 400V | ±16V | CoolMOS™ P7 | |||||||||||
| IRF5805 | MOSFET P-CH 30V 3.8A 6-TSOP | Infineon Technologies | Micro6™(TSOP-6) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | P-Channel | 2W (Ta) | 30V | 3.8A (Ta) | 98mOhm @ 3.8A, 10V | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 511pF @ 25V | ±20V | HEXFET® | ||||||||||||
| SPB100N03S2-03 G | MOSFET N-CH 30V 100A D2PAK | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 30V | 100A (Tc) | 3mOhm @ 80A, 10V | 10V | 4V @ 250µA | 150nC @ 10V | 7020pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IPP80N06S3L-08 | MOSFET N-CH 55V 80A TO-220 | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 105W (Tc) | 55V | 80A (Tc) | 7.9mOhm @ 43A, 10V | 5V, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | ±16V | OptiMOS™ | |||||||||||
| PH4030AL,115 | MOSFET N-CH 30V 100A LFPAK | Nexperia USA Inc. | LFPAK56, Power-SO8 | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | N-Channel | 30V | 100A (Tc) | 4mOhm @ 15A, 10V | 2.15V @ 1mA | 36.6nC @ 10V | 2090pF @ 12V | TrenchMOS™ | |||||||||||||||
| PMPB27EP,115 | MOSFET P-CH 30V 6.1A 6DFN | Nexperia USA Inc. | DFN2020MD-6 | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.7W (Ta), 12.5W (Tc) | 30V | 6.1A (Ta) | 29mOhm @ 6.1A, 10V | 4.5V, 10V | 2.5V @ 250µA | 45nC @ 10V | 1570pF @ 15V | ±20V | ||||||||||||
| FQPF9N50CYDTU | MOSFET N-CH 500V 9A TO-220F | onsemi | TO-220F-3 (Y-Forming) | Through Hole | TO-220-3 Full Pack, Formed Leads | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 44W (Tc) | 500V | 9A (Tc) | 800mOhm @ 4.5A, 10V | 10V | 4V @ 250µA | 35nC @ 10V | 1030pF @ 25V | ±30V | QFET® | |||||||||||
| 6LN04CH-TL-E-ON | N-CHANNEL SILICON MOSFET | onsemi | |||||||||||||||||||||||||||
| 2SK3617-S-TL-E | NCH 4V DRIVE SERIES | Rochester Electronics, LLC | |||||||||||||||||||||||||||
| STB6N60M2 | MOSFET N-CH 600V D2PAK | STMicroelectronics | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 60W (Tc) | 600V | 4.5A (Tc) | 1.2Ohm @ 2.25A, 10V | 10V | 4V @ 250µA | 8nC @ 10V | 232pF @ 100V | ±25V | MDmesh™ II Plus | |||||||||||
| SSM3J35AMFV,L3F | X34 SMALL LOW ON RESISTANCE PCH | Toshiba Semiconductor and Storage | VESM | Surface Mount | SOT-723 | MOSFET (Metal Oxide) | 150°C | P-Channel | 150mW (Ta) | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1.2V, 4.5V | 1V @ 100µA | 42pF @ 10V | ±10V | U-MOSVII | ||||||||||||
| IRL540S | MOSFET N-CH 100V 28A D2PAK | Vishay Siliconix | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.7W (Ta), 150W (Tc) | 100V | 28A (Tc) | 77mOhm @ 17A, 5V | 4V, 5V | 2V @ 250µA | 64nC @ 5V | 2200pF @ 25V | ±10V |
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