Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single 1250W

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 11
  • MRFE6VP61K25HR5
    FET RF 2CH 133V 230MHZ NI-1230
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-1230
    • Supplier Device Package: NI-1230
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 24dB
    • Voltage - Test: 50V
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  • MRFE6VP61K25HSR5
    FET RF 2CH 133V 230MHZ NI-1230S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-1230-4S
    • Supplier Device Package: NI-1230-4S
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 24dB
    • Voltage - Test: 50V
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  • IGN1011L1200
    GAN, RF POWER TRANSISTOR, L-BAND
    Integra Technologies Inc.
    • Manufacturer: Integra Technologies Inc.
    • Package / Case: PL84A1
    • Supplier Device Package: PL84A1
    • Frequency: 1.03GHz ~ 1.09GHz
    • Voltage - Rated: 180V
    • Current - Test: 160mA
    • Power - Output: 1250W
    • Transistor Type: HEMT
    • Gain: 16.8dB
    • Voltage - Test: 50V
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  • MRFE6VP61K25HR6
    FET RF 2CH 133V 230MHZ NI-1230
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-1230
    • Supplier Device Package: NI-1230
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 24dB
    • Voltage - Test: 50V
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  • MRFE6VP61K25HSR6
    FET RF 2CH 133V 230MHZ NI-1230S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-1230S
    • Supplier Device Package: NI-1230S
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 24dB
    • Voltage - Test: 50V
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  • MRFE6VP61K25GSR5
    FET RF 2CH 133V 230MHZ NI1230GS
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-1230S-4 GW
    • Supplier Device Package: NI-1230S-4 GULL
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS
    • Gain: 24dB
    • Voltage - Test: 50V
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  • MRFE6VP61K25NR6
    RF MOSFET LDMOS DL 50V OM1230-4L
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: OM-1230-4L
    • Supplier Device Package: OM-1230-4L
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 23dB
    • Voltage - Test: 50V
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  • MMRF1306HR5
    RF MOSFET LDMOS DL 50V NI-1230
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: SOT-979A
    • Supplier Device Package: NI-1230-4H
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 24dB
    • Voltage - Test: 50V
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  • MRFE6VP61K25GNR6
    TRANS RF LDMOS 1250W 50V
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: OM-1230G-4L
    • Supplier Device Package: OM-1230G-4L
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 23dB
    • Voltage - Test: 50V
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  • MMRF1306HSR5
    FET RF 2CH 133V 230MHZ NI-1230S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-1230-4S
    • Supplier Device Package: NI-1230-4S
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 24dB
    • Voltage - Test: 50V
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  • MMRF1306HR5
    RF POWER FIELD-EFFECT TRANSISTOR
    Freescale Semiconductor
    • Manufacturer: Freescale Semiconductor
    • Package / Case: SOT-979A
    • Supplier Device Package: NI-1230-4H
    • Frequency: 230MHz
    • Voltage - Rated: 133V
    • Current - Test: 100mA
    • Power - Output: 1250W
    • Transistor Type: LDMOS (Dual)
    • Gain: 24dB
    • Voltage - Test: 50V
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