Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single 125W
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Freescale Semiconductor
- Package / Case: SOT-957A
- Supplier Device Package: NI-880H-2L
- Frequency: 2.11GHz ~ 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 1.6A
- Power - Output: 125W
- Transistor Type: N-Channel
- Gain: 13dB
- Voltage - Test: 28V
- Current Rating (Amps): 10µA
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- Manufacturer: MACOM Technology Solutions
- Frequency: 960MHz ~ 1.215GHz
- Voltage - Rated: 65V
- Current - Test: 100mA
- Power - Output: 125W
- Transistor Type: HEMT
- Gain: 18.9dB
- Voltage - Test: 50V
- Current Rating (Amps): 4A
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- Manufacturer: NXP USA Inc.
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
- Frequency: 1.93GHz
- Voltage - Rated: 65V
- Current - Test: 1.1A
- Power - Output: 125W
- Transistor Type: LDMOS
- Gain: 16.5dB
- Voltage - Test: 28V
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- Manufacturer: NXP USA Inc.
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
- Frequency: 1.88GHz
- Voltage - Rated: 65V
- Current - Test: 1.1A
- Power - Output: 125W
- Transistor Type: LDMOS
- Gain: 17dB
- Voltage - Test: 28V
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- Manufacturer: NXP USA Inc.
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
- Frequency: 225MHz
- Voltage - Rated: 110V
- Current - Test: 2.6A
- Power - Output: 125W
- Transistor Type: LDMOS (Dual)
- Gain: 25dB
- Voltage - Test: 50V
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- Manufacturer: NXP USA Inc.
- Package / Case: SOT-979A
- Supplier Device Package: NI-1230-4H
- Frequency: 225MHz
- Voltage - Rated: 120V
- Current - Test: 2.6A
- Power - Output: 125W
- Transistor Type: LDMOS (Dual)
- Gain: 25dB
- Voltage - Test: 50V
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- Manufacturer: NXP USA Inc.
- Package / Case: NI-400S-2S
- Supplier Device Package: NI-400S-2S
- Frequency: 30MHz ~ 2.2GHz
- Voltage - Rated: 150V
- Current - Test: 200mA
- Power - Output: 125W
- Transistor Type: HEMT
- Gain: 18.4dB
- Voltage - Test: 50V
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- Manufacturer: MACOM Technology Solutions
- Package / Case: 211-11, Style 2
- Supplier Device Package: 211-11, Style 2
- Frequency: 150MHz
- Voltage - Rated: 65V
- Current - Test: 2A
- Power - Output: 125W
- Transistor Type: N-Channel
- Gain: 11.8dB
- Voltage - Test: 28V
- Noise Figure: 3dB
- Current Rating (Amps): 13A
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- Manufacturer: NXP USA Inc.
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
- Frequency: 1.88GHz
- Voltage - Rated: 65V
- Current - Test: 1.1A
- Power - Output: 125W
- Transistor Type: LDMOS
- Gain: 17dB
- Voltage - Test: 28V
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- Manufacturer: Microsemi Corporation
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Frequency: 13.56MHz
- Voltage - Rated: 150V
- Current - Test: 200mA
- Power - Output: 125W
- Transistor Type: N-Channel
- Gain: 21dB
- Voltage - Test: 50V
- Current Rating (Amps): 11A
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- Manufacturer: NXP USA Inc.
- Package / Case: TO-270AA
- Supplier Device Package: OM-270-2
- Frequency: 2.5GHz
- Voltage - Rated: 125V
- Current - Test: 350mA
- Power - Output: 125W
- Transistor Type: HEMT
- Gain: 16.6dB
- Voltage - Test: 50V
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- Manufacturer: Microsemi Corporation
- Frequency: 13.56MHz
- Voltage - Rated: 150V
- Current - Test: 200mA
- Power - Output: 125W
- Transistor Type: N-Channel
- Gain: 21dB
- Voltage - Test: 50V
- Current Rating (Amps): 11A
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- Manufacturer: NXP USA Inc.
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
- Frequency: 860MHz
- Voltage - Rated: 130V
- Current - Test: 1.4A
- Power - Output: 125W
- Transistor Type: LDMOS (Dual)
- Gain: 19.3dB
- Voltage - Test: 50V
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- Manufacturer: NXP USA Inc.
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
- Frequency: 1.93GHz
- Voltage - Rated: 65V
- Current - Test: 1.1A
- Power - Output: 125W
- Transistor Type: LDMOS
- Gain: 16.5dB
- Voltage - Test: 28V
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- Manufacturer: NXP USA Inc.
- Package / Case: NI-360H-2SB
- Supplier Device Package: NI-360H-2SB
- Frequency: 2.5GHz
- Voltage - Rated: 125V
- Current - Test: 350mA
- Power - Output: 125W
- Transistor Type: HEMT
- Gain: 18dB
- Voltage - Test: 50V
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