• Power - Output
  • Manufacturer
  • Supplier Device Package
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 24
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Noise Figure
Voltage - Test
Current - Test
MAGX-001214-125L00 TRANSISTOR GAN 125W 1.2-1.4GHZ MACOM Technology Solutions 125W 1.2GHz ~ 1.4GHz 65V 4.8A HEMT 18.4dB 50V 100mA
MRF6VP2600HR5 FET RF 2CH 110V 225MHZ NI-1230 NXP USA Inc. NI-1230 125W 225MHz 110V NI-1230 LDMOS (Dual) 25dB 50V 2.6A
MRF7S18125BHSR3 FET RF 65V 1.93GHZ NI780 NXP USA Inc. NI-780S 125W 1.93GHz 65V NI-780S LDMOS 16.5dB 28V 1.1A
MRFE6VP8600HSR5 FET RF 2CH 130V 860MHZ NI1230S NXP USA Inc. NI-1230S 125W 860MHz 130V NI-1230S LDMOS (Dual) 19.3dB 50V 1.4A
MRF7S18125AHSR3 FET RF 65V 1.88GHZ NI780S NXP USA Inc. NI-780S 125W 1.88GHz 65V NI-780S LDMOS 17dB 28V 1.1A
MRFE6VP8600HSR6 FET RF 2CH 130V 860MHZ NI1230S NXP USA Inc. NI-1230S 125W 860MHz 130V NI-1230S LDMOS (Dual) 19.3dB 50V 1.4A
MRF7S18125AHSR5 FET RF 65V 1.88GHZ NI780S NXP USA Inc. NI-780S 125W 1.88GHz 65V NI-780S LDMOS 17dB 28V 1.1A
MRFE6VP8600HR6 FET RF 2CH 130V 860MHZ NI1230H NXP USA Inc. NI-1230 125W 860MHz 130V NI-1230 LDMOS (Dual) 19.3dB 50V 1.4A
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  • 50
  • 100