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  • Voltage - Rated
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    • Voltage - Test
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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
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    • Gate Charge (Qg) (Max) @ Vgs
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    • Vgs (Max)
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List Table
Found: 46889
  • BUK7E1R6-30E,127
    BUK7E1R6-30E - POWER, I2PAK
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: TrenchMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: I2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11.96pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 349W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • NVMFS5C460NLT3G
    MOSFET N-CH 40V SO8FL
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SSM6J503NU,LF
    MOSFET P CH 20V 6A 2-2AA1A
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: U-MOSVI
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 6-WDFN Exposed Pad
    • Supplier Device Package: 6-UDFNB (2x2)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
    • Vgs (Max): ±8V
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  • NTD4858NA-1G
    MOSFET N-CH 25V 11.2A IPAK
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: I-PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
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  • STL180N6F7
    N-CHANNEL 60 V, 1.9 MOHM TYP., 1
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: STripFET™ F7
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: PowerFlat™ (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 79.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4825pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.8W (Ta), 166W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • XP162A11C0PR-G
    MOSFET P-CH 30V 2.5A SOT89
    Torex Semiconductor Ltd
    • Manufacturer: Torex Semiconductor Ltd
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • BUK953R2-40E,127
    MOSFET N-CH 40V 100A TO220AB
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Series: TrenchMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 69.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 9150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 234W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±10V
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  • TK22E10N1,S1X
    MOSFET N CH 100V 52A TO220
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: U-MOSVIII-H
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
    • Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 300µA
    • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 72W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • NTD24N06L-1G
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: I-PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1.14pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): ±15V
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  • PXAC261212FC-V1-R250
    IC AMP RF LDMOS
    Wolfspeed, Inc.
    • Manufacturer: Wolfspeed, Inc.
    • Package / Case: H-37248-4
    • Supplier Device Package: H-37248-4
    • Frequency: 2.69GHz
    • Voltage - Rated: 65V
    • Current - Test: 280mA
    • Power - Output: 28W
    • Transistor Type: LDMOS
    • Gain: 15dB
    • Voltage - Test: 28V
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  • HAT2173HWS-E
    MOSFET N-CH LFPAK-5
    Renesas Electronics America
    • Manufacturer: Renesas Electronics America
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C
    • Package / Case: SC-100, SOT-669
    • Supplier Device Package: 5-LFPAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
    • Rds On (Max) @ Id, Vgs: 15mOhm @ 12.5A, 10V
    • Vgs(th) (Max) @ Id: 6V @ 20mA
    • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 30W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
    • Vgs (Max): ±20V
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  • FDS4070N3
    MOSFET N-CH 40V 15.3A 8-SOIC
    onsemi
    • Manufacturer: onsemi
    • Series: PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2819pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP3N100P
    MOSFET N-CH 1000V 3A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarVHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • SI4128DY-T1-GE3
    MOSFET N-CH 30V 10.9A 8-SOIC
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IPP50R299CPHKSA1
    MOSFET N-CH 550V TO220-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 550V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 440µA
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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