• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
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    • Technology
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    • Noise Figure
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    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 46889
  • IRLZ24STRR
    MOSFET N-CH 60V 17A D2PAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
    • Vgs (Max): ±10V
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  • BSS123-TP
    N-CHANNELMOSFETSOT-23
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 170mA
    • Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
    • Vgs(th) (Max) @ Id: 2.8V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350mW
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • BUZ73HXKSA1
    MOSFET N-CH 200V 7A TO220-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
    • Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 40W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • RF4C100BCTCR
    PCH -20V -10A MIDDLE POWER MOSFE
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 8-PowerUDFN
    • Supplier Device Package: HUML2020L8
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
    • Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI2303BDS-T1-E3
    MOSFET P-CH 30V 1.49A SOT23-3
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 700mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF620B_FP001
    MOSFET N-CH 200V 5A TO-220
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 47W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTX3N250L
    MOSFET DISCRETE TO-247P
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 2500V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
    • Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 417W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL3303D1STRL
    MOSFET N-CH 30V 38A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
    • Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 68W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • AOD2606
    MOSFET N-CH 60V 46A TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252, (D-Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • CE3512K2
    RF FET 4V 12GHZ 4MICROX
    CEL
    • Manufacturer: CEL
    • Package / Case: 4-Micro-X
    • Supplier Device Package: 4-Micro-X
    • Frequency: 12GHz
    • Voltage - Rated: 4V
    • Current - Test: 10mA
    • Power - Output: 125mW
    • Transistor Type: pHEMT FET
    • Gain: 13.7dB
    • Voltage - Test: 2V
    • Noise Figure: 0.5dB
    • Current Rating (Amps): 15mA
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  • FQAF11N90
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: QFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3 Full Pack
    • Supplier Device Package: TO-3PF
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
    • Rds On (Max) @ Id, Vgs: 960mOhm @ 3.6A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 120W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • 2SJ328-Z-AZ
    P-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
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  • FCP4N60
    MOSFET N-CH 600V 3.9A TO-220
    onsemi
    • Manufacturer: onsemi
    • Series: SuperFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • PTVA092407NF-V1-R5
    IC RF LDMOS FET 4HBSOF
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Package / Case: HBSOF-4-1
    • Supplier Device Package: PG-HBSOF-4-1
    • Frequency: 869MHz ~ 960MHz
    • Voltage - Rated: 105V
    • Current - Test: 900mA
    • Power - Output: 240W
    • Transistor Type: LDMOS
    • Gain: 22.5dB
    • Voltage - Test: 48V
    • Current Rating (Amps): 10µA
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  • NTE2382
    MOSFET-PWR N-CH HI SPEED
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
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