- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AO7800 | MOSFET 2N-CH 20V SC70-6 | Alpha & Omega Semiconductor Inc. | SC-70-6 | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 900mA | Logic Level Gate | 300mOhm @ 900mA, 4.5V | 900mV @ 250µA | 1.9nC @ 4.5V | 120pF @ 10V | ||||||||||||||
| DMTH8012LK3Q-13 | MOSFET NCH 80V 50A TO252 | Diodes Incorporated | TO-252, (D-Pak) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.6W (Ta) | 80V | 50A (Tc) | 16mOhm @ 12A, 10V | 4.5V, 10V | 3V @ 250µA | 46.8nC @ 10V | 2051pF @ 40V | ±20V | Automotive, AEC-Q101 | |||||||||||
| ZXMN10A25GTA | MOSFET N-CH 100V 2.9A SOT223 | Diodes Incorporated | SOT-223 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2W (Ta) | 100V | 2.9A (Ta) | 125mOhm @ 2.9A, 10V | 10V | 4V @ 250µA | 17nC @ 10V | 859pF @ 50V | ±20V | ||||||||||||
| DMN3013LFG-13 | MOSFET BVDSS: 25V-30V POWERDI333 | Diodes Incorporated | PowerDI3333-8 (Type D) | 2.16W (Ta) | Surface Mount | 8-PowerLDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 9.5A (Ta), 15A (Tc) | Standard | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 5.7nC @ 4.5V | 600pF @ 15V | ||||||||||||||
| ZVP1320ASTOA | MOSFET P-CH 200V 0.07A TO92-3 | Diodes Incorporated | E-Line (TO-92 compatible) | Through Hole | E-Line-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 625mW (Ta) | 200V | 70mA (Ta) | 80Ohm @ 50mA, 10V | 10V | 3.5V @ 1mA | 50pF @ 25V | ±20V | |||||||||||||
| PTFA190451FV4R250XTMA1 | IC FET RF LDMOS 45W H-37265-2 | Infineon Technologies | H-37265-2 | 11W | 1.96GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 17.5dB | 28V | 450mA | |||||||||||||||||
| IRF3805PBF | MOSFET N-CH 55V 75A TO-220AB | Infineon Technologies | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 55V | 75A (Tc) | 3.3mOhm @ 75A, 10V | 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | ±20V | HEXFET® | |||||||||||
| PHP225,118-NXP | SMALL SIGNAL FIELD-EFFECT TRANSI | NXP USA Inc. | |||||||||||||||||||||||||||
| SMP3003-DL-1EX | MOSFET P-CH 75V 100A SMP-FD | onsemi | |||||||||||||||||||||||||||
| FQNL1N50BBU | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | TO-92-3 | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.5W (Tc) | 500V | 270mA (Tc) | 9Ohm @ 135mA, 10V | 10V | 3.7V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | ±30V | QFET® | |||||||||||
| SP8K33TB1 | MOSFET 2N-CH 60V 8SOP | Rohm Semiconductor | |||||||||||||||||||||||||||
| STB40N20 | MOSFET N-CH 200V 40A D2PAK | STMicroelectronics | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 160W (Tc) | 200V | 40A (Tc) | 45mOhm @ 20A, 10V | 10V | 4V @ 250µA | 75nC @ 10V | 2500pF @ 25V | ±20V | STripFET™ | |||||||||||
| STL100N6LF6 | MOSFET N CH 60V 100A PWRFLAT 5X6 | STMicroelectronics | PowerFlat™ (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 4.8W (Tc) | 60V | 100A (Tc) | 4.5mOhm @ 11A, 10V | 4.5V, 10V | 2.5V @ 250µA | 130nC @ 10V | 8900pF @ 25V | ±20V | DeepGATE™, STripFET™ VI | |||||||||||
| SI7164DP-T1-GE3 | MOSFET N-CH 60V 60A PPAK SO-8 | Vishay Siliconix | PowerPAK® SO-8 | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 6.25W (Ta), 104W (Tc) | 60V | 60A (Tc) | 6.25mOhm @ 10A, 10V | 10V | 4.5V @ 250µA | 75nC @ 10V | 2830pF @ 30V | ±20V | TrenchFET® | |||||||||||
| IRLI540GPBF | MOSFET N-CH 100V 17A TO220FP | Vishay Siliconix | TO-220-3 | Through Hole | TO-220-3 Full Pack, Isolated Tab | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 48W (Tc) | 100V | 17A (Tc) | 77mOhm @ 10A, 5V | 4V, 5V | 2V @ 250µA | 64nC @ 5V | 2200pF @ 25V | ±10V |
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