- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLR7811WCPBF | MOSFET N-CH 30V 64A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 30V | 64A (Tc) | 10.5mOhm @ 15A, 10V | 4.5V, 10V | 2.5V @ 250µA | 31nC @ 4.5V | 2260pF @ 15V | ±12V | HEXFET® | |||||||||||
| IRL3502SPBF | MOSFET N-CH 20V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 140W (Tc) | 20V | 110A (Tc) | 7mOhm @ 64A, 7V | 4.5V, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | ±10V | HEXFET® | |||||||||||
| IAUT300N10S5N015ATMA1 | 100V 300A 1.5MOHM TOLL | Infineon Technologies | PG-HSOF-8-1 | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 100V | 300A (Tc) | 1.5mOhm @ 100A, 10V | 6V, 10V | 3.8V @ 275µA | 216nC @ 10V | 16011pF @ 50V | ±20V | OptiMOS™-5 | |||||||||||
| IPN70R1K0CEATMA1 | MOSFET N-CH 750V 7.4A SOT223 | Infineon Technologies | PG-SOT223 | Surface Mount | TO-261-3 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 5W (Tc) | 750V | 7.4A (Tc) | 1Ohm @ 1.5A, 10V | 10V | 3.5V @ 150µA | 14.9nC @ 10V | 328pF @ 100V | ±20V | ||||||||||||
| IRF3711STRLPBF | MOSFET N-CH 20V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.1W (Ta), 120W (Tc) | 20V | 110A (Tc) | 6mOhm @ 15A, 10V | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | HEXFET® | |||||||||||
| BUZ31L H | MOSFET N-CH 200V 13.5A TO220-3 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 95W (Tc) | 200V | 13.5A (Tc) | 200mOhm @ 7A, 5V | 5V | 2V @ 1mA | 1600pF @ 25V | ±20V | SIPMOS® | ||||||||||||
| IRF7739L1TRPBF | MOSFET N-CH 40V 46A DIRECTFETL8 | Infineon Technologies | DIRECTFET L8 | Surface Mount | DirectFET™ Isometric L8 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 125W (Tc) | 40V | 46A (Ta), 270A (Tc) | 1mOhm @ 160A, 10V | 10V | 4V @ 250µA | 330nC @ 10V | 11880pF @ 25V | ±20V | ||||||||||||
| IRLI2910PBF | MOSFET N-CH 100V 31A TO220FP | Infineon Technologies | TO-220AB Full-Pak | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 63W (Tc) | 100V | 31A (Tc) | 26mOhm @ 16A, 10V | 4V, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | ±16V | HEXFET® | |||||||||||
| IPG15N06S3L-45 | MOSFET 2N-CH 55V 15A TDSON-8 | Infineon Technologies | PG-TDSON-8-4 | 21W | Surface Mount | 8-PowerVDFN | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 55V | 15A | Logic Level Gate | 45mOhm @ 10A, 10V | 2.2V @ 10µA | 20nC @ 10V | 1420pF @ 25V | OptiMOS™ | |||||||||||||
| IRF6709S2TRPBF | MOSFET N-CH 25V 12A DIRECTFET-S1 | Infineon Technologies | DIRECTFET S1 | Surface Mount | DirectFET™ Isometric S1 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1.8W (Ta), 21W (Tc) | 25V | 12A (Ta), 39A (Tc) | 7.8mOhm @ 12A, 10V | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1010pF @ 13V | ±20V | HEXFET® | |||||||||||
| IRF7492 | MOSFET N-CH 200V 3.7A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 200V | 3.7A (Ta) | 79mOhm @ 2.2A, 10V | 10V | 2.5V @ 250µA | 59nC @ 10V | 1820pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRFS33N15DTRLP | MOSFET N-CH 150V 33A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 170W (Tc) | 150V | 33A (Tc) | 56mOhm @ 20A, 10V | 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | ±30V | HEXFET® | |||||||||||
| IRFR3103TRL | MOSFET N-CH 400V 1.7A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | N-Channel | 2.5W (Ta), 25W (Tc) | 400V | 1.7A (Ta) | 3.6Ohm @ 1A, 10V | 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | ±20V | HEXFET® | ||||||||||||
| IRFZ46NS | MOSFET N-CH 55V 53A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 107W (Tc) | 55V | 53A (Tc) | 16.5mOhm @ 28A, 10V | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRF1902PBF | MOSFET N-CH 20V 4.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 20V | 4.2A (Ta) | 85mOhm @ 4A, 4.5V | 2.7V, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | ±12V | HEXFET® |
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