- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF9530NSTRR | MOSFET P-CH 100V 14A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 79W (Tc) | 100V | 14A (Tc) | 200mOhm @ 8.4A, 10V | 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | ±20V | HEXFET® | |||||||||||
| BUZ30A | MOSFET N-CH 200V 21A TO-220AB | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 200V | 21A (Tc) | 130mOhm @ 13.5A, 10V | 10V | 4V @ 1mA | 1900pF @ 25V | ±20V | SIPMOS® | ||||||||||||
| IRF5800 | MOSFET P-CH 30V 4A 6-TSOP | Infineon Technologies | Micro6™(TSOP-6) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 30V | 4A (Ta) | 85mOhm @ 4A, 10V | 4.5V, 10V | 1V @ 250µA | 17nC @ 10V | 535pF @ 25V | ±20V | HEXFET® | |||||||||||
| IPS60R2K1CEAKMA1 | CONSUMER | Infineon Technologies | |||||||||||||||||||||||||||
| IPW90R800C3FKSA1 | MOSFET N-CH 900V 6.9A TO-247 | Infineon Technologies | PG-TO247-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 900V | 6.9A (Tc) | 800mOhm @ 4.1A, 10V | 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| AUIRFR5305TR | MOSFET P-CH 55V 31A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | P-Channel | 55V | 31A (Tc) | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | HEXFET® | |||||||||||||||
| IPA65R600E6XKSA1 | MOSFET N-CH 650V 7.3A TO220 | Infineon Technologies | PG-TO220-FP | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 28W (Tc) | 650V | 7.3A (Tc) | 600mOhm @ 2.1A, 10V | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| IPD85P04P4L06ATMA1 | MOSFET P-CH TO252-3 | Infineon Technologies | PG-TO252-3-313 | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 88W (Tc) | 40V | 85A (Tc) | 6.4mOhm @ 85A, 10V | 4.5V, 10V | 2.2V @ 150µA | 104nC @ 10V | 6580pF @ 25V | ±16V | Automotive, AEC-Q101, OptiMOS™ | |||||||||||
| IPD60R1K4C6ATMA1 | MOSFET N-CH 600V 3.2A TO252-3 | Infineon Technologies | PG-TO252-3 | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 28.4W (Tc) | 600V | 3.2A (Tc) | 1.4Ohm @ 1.1A, 10V | 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | ±20V | CoolMOS™ C6 | |||||||||||
| IRFH8324TRPBF | MOSFET N-CH 30V 90A 5X6 PQFN | Infineon Technologies | PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 54W (Tc) | 30V | 23A (Ta), 90A (Tc) | 4.1mOhm @ 20A, 10V | 4.5V, 10V | 2.35V @ 50µA | 31nC @ 10V | 2380pF @ 10V | ±20V | HEXFET® | |||||||||||
| IRF3710STRLPBF | MOSFET N-CH 100V 57A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 100V | 57A (Tc) | 23mOhm @ 28A, 10V | 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | ±20V | HEXFET® | |||||||||||
| IPI80N06S2L11AKSA1 | MOSFET N-CH 55V 80A TO262-3 | Infineon Technologies | PG-TO262-3 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 158W (Tc) | 55V | 80A (Tc) | 11mOhm @ 60A, 10V | 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| BSL303SPEH6327XTSA1 | MOSFET P-CH 30V 6.3A TSOP-6 | Infineon Technologies | PG-TSOP-6-6 | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 30V | 6.3A (Ta) | 33mOhm @ 6.3A, 10V | 4.5V, 10V | 2V @ 30µA | 20.9nC @ 10V | 1401pF @ 15V | ±20V | OptiMOS™ | |||||||||||
| IRF2204SPBF | MOSFET N-CH 40V 170A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 40V | 170A (Tc) | 3.6mOhm @ 130A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 5890pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRF9540NSTRRPBF | MOSFET P-CH 100V 23A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 3.1W (Ta), 110W (Tc) | 100V | 23A (Tc) | 117mOhm @ 14A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | ±20V | HEXFET® |
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