- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Operating Temperature
|
Supplier Device Package
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FJPF1943RTU | TRANS PNP 230V 15A TO220F-3 | Fairchild Semiconductor | TO-220-3 Full Pack | 15A | 230V | 50W | Through Hole | PNP | -50°C ~ 150°C (TJ) | TO-220F-3 | 3V @ 800mA, 8A | 5µA (ICBO) | 55 @ 1A, 5V | 30MHz | |
| FJPF13009H2TU | TRANS NPN 400V 12A TO220F-3 | Fairchild Semiconductor | TO-220-3 Full Pack | 12A | 400V | 50W | Through Hole | NPN | 150°C (TJ) | TO-220F-3 | 3V @ 3A, 12A | 8 @ 5A, 5V | 4MHz | ||
| JANTXV2N4150S | TRANS NPN 70V 10A TO39 | Microchip Technology | TO-205AD, TO-39-3 Metal Can | 10A | 70V | 1W | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-39 (TO-205AD) | 2.5V @ 1A, 10A | 10µA | 40 @ 5A, 5V | Military, MIL-PRF-19500/394 | |
| 2N3762U4 | POWER BJT | Microchip Technology | |||||||||||||
| JANSL2N5002 | TRANS NPN 80V 50UA TO59 | Microchip Technology | TO-210AA, TO-59-4, Stud | 50 µA | 80V | 2W | Stud Mount | NPN | -65°C ~ 200°C (TJ) | TO-59 | 1.5V @ 500mA, 5A | 50µA | 30 @ 2.5A, 5V | Military, MIL-PRF-19500/534 | |
| PBSS5260QA147 | SMALL SIGNAL BIPOLAR TRANSISTOR | NXP USA Inc. | |||||||||||||
| 2N2907 | TRANS PNP 40V 0.6A TO18 | onsemi | TO-206AA, TO-18-3 Metal Can | 600mA | 40V | 400mW | Through Hole | PNP | TO-18 | 1.6V @ 50mA, 500mA | 100 @ 150mA, 10V | ||||
| LSMBT1005LT1 | MINIBLOC TRANSISTOR | onsemi | |||||||||||||
| BF422RL1G | TRANS NPN 250V 0.05A TO92 | onsemi | TO-226-3, TO-92-3 Long Body (Formed Leads) | 50mA | 250V | 830mW | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-92 (TO-226) | 500mV @ 2mA, 20mA | 50 @ 25mA, 20V | 60MHz | ||
| 2SA1319S-AA | 2SA1319 - PNP EPITAXIAL PLANAR S | onsemi | |||||||||||||
| 2SD1843-T-AZ | NPN DARLINGTON TRANSISTOR | Renesas Electronics America Inc | |||||||||||||
| 2SB1165S | POWER BIPOLAR TRANSISTOR, PNP | Rochester Electronics, LLC | |||||||||||||
| CE2A3Q-T-AZ | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | |||||||||||||
| 2SC3416E | POWER BIPOLAR TRANSISTOR NPN | Rochester Electronics, LLC | |||||||||||||
| BD533 | TRANS NPN 45V 8A TO220 | STMicroelectronics | TO-220-3 | 8A | 45V | 50W | Through Hole | NPN | 150°C (TJ) | TO-220 | 800mV @ 600mA, 6A | 100µA | 25 @ 2A, 2V |
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