Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 1.31W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 1
  • ULN2803AFWG,C,EL
    TRANS 8NPN DARL 50V 0.5A 18SOL
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 85°C (TA)
    • Package / Case: 18-SOIC (0.295", 7.50mm Width)
    • Supplier Device Package: 18-SOP
    • Power - Max: 1.31W
    • Transistor Type: 8 NPN Darlington
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
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