Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 118 W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 2
  • MJH10012
    TRANS NPN DARL 400V 10A TO3
    Motorola
    • Manufacturer: Motorola
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 118 W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 3A, 6V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
    • Current - Collector Cutoff (Max): 1mA
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  • 2N2824
    TRANS 100V 30A TO63
    General Semiconductor
    • Manufacturer: General Semiconductor
    • Mounting Type: Stud Mount
    • Package / Case: TO-211MB, TO-63-4, Stud
    • Supplier Device Package: TO-63
    • Power - Max: 118 W
    • Current - Collector (Ic) (Max): 30A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 1A, 10A
    • Frequency - Transition: 20MHz
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