Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 110W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 6
  • BUL416T
    TRANS NPN 800V 6A TO220
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 110W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 6A
    • Voltage - Collector Emitter Breakdown (Max): 800V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.33A, 4A
    • Current - Collector Cutoff (Max): 250µA
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  • BUT12AI,127
    TRANS NPN 450V 8A TO220AB
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Power - Max: 110W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 8A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 860mA, 5A
    • Current - Collector Cutoff (Max): 1mA
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  • BUL416
    TRANS NPN 800V 6A TO220
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 110W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 6A
    • Voltage - Collector Emitter Breakdown (Max): 800V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 700mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 1.33A, 4A
    • Current - Collector Cutoff (Max): 250µA
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  • BUL98
    TRANS NPN 450V 12A TO220
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 110W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.4A, 12A
    • Current - Collector Cutoff (Max): 100µA
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  • BUL89
    TRANS NPN 400V 12A TO220
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 110W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 5V @ 2.4A, 12A
    • Current - Collector Cutoff (Max): 100µA
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  • FJBE2150DTU
    TRANS NPN 800V 2A D2PAK
    onsemi
    • Manufacturer: onsemi
    • Series: ESBC™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 125°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263)
    • Power - Max: 110W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 2A
    • Voltage - Collector Emitter Breakdown (Max): 800V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 330mA, 1A
    • Current - Collector Cutoff (Max): 100µA
    • Frequency - Transition: 5MHz
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