Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 100W
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 800mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
- Current - Collector Cutoff (Max): 100µA
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 7A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.4A, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 10MHz
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
- Current - Collector Cutoff (Max): 50µA
- Frequency - Transition: 12MHz
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- Manufacturer: onsemi
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 14MHz
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 100W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A
- Current - Collector Cutoff (Max): 50µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 14MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Frequency - Transition: 4MHz
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
- Power - Max: 100W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/624
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
- Power - Max: 100W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 550V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
- Current - Collector Cutoff (Max): 50µA
- Frequency - Transition: 12MHz
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/623
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254
- Power - Max: 100W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/624
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
- Power - Max: 100W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 400V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
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- Offers in stock:
- 10
- 15
- 50
- 100