Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 100W

Found: 104
  • NOW WEEN - BUJ303B - POWER BIPOL
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 800mA, 3V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
    • Current - Collector Cutoff (Max): 100µA
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  • TRANS NPN 400V 12A TO3P
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 7A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.4A, 7A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 10MHz
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  • TRANS NPN 400V 5A TO220
    Bourns Inc.
    • Manufacturer: Bourns Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
    • Current - Collector Cutoff (Max): 50µA
    • Frequency - Transition: 12MHz
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  • TRANS NPN 400V 6A TO220
    onsemi
    • Manufacturer: onsemi
    • Series: SWITCHMODE™
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 6A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
    • Current - Collector Cutoff (Max): 100µA
    • Frequency - Transition: 14MHz
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  • TRANS NPN DARL 450V 4A SOT93
    Bourns Inc.
    • Manufacturer: Bourns Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: SOT-93
    • Power - Max: 100W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 4A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A
    • Current - Collector Cutoff (Max): 50µA
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  • TRANS NPN 500V 5A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 500V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 14MHz
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  • TRANS NPN 400V 12A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
    • Frequency - Transition: 4MHz
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  • TRANS NPN DARL 400V 8A D2PAK
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK
    • Power - Max: 100W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 8A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
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  • TRANS NPN DARL 100V 12A TO254
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/624
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-254-3, TO-254AA (Straight Leads)
    • Supplier Device Package: TO-254AA
    • Power - Max: 100W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN 550V 4A SOT93
    Bourns Inc.
    • Manufacturer: Bourns Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: SOT-93
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 4A
    • Voltage - Collector Emitter Breakdown (Max): 550V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
    • Current - Collector Cutoff (Max): 50µA
    • Frequency - Transition: 12MHz
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  • TRANS PNP DARL 100V 12A TO254
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/623
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-254-3, TO-254AA (Straight Leads)
    • Supplier Device Package: TO-254
    • Power - Max: 100W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN DARL 100V 12A TO254AA
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/624
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-254-3, TO-254AA (Straight Leads)
    • Supplier Device Package: TO-254AA
    • Power - Max: 100W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN 450V 8A TO220-3
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 100W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 8A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 6A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP 400V 5A TO3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 100W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
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  • TRANS PNP 140V 10A TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 100W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 140V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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