Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 1.47W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 4
  • DXTN3C100PD-13
    PWR LOW SAT TRANSISTOR POWERDI50
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: PowerDI5060-8 (Type UXD)
    • Power - Max: 1.47W
    • Transistor Type: 2 NPN (Dual)
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 130MHz
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • ULN2004APG,C,N
    IC PWR RELAY 7NPN 1:1 16DIP
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 85°C (TA)
    • Package / Case: 16-DIP (0.300", 7.62mm)
    • Supplier Device Package: 16-DIP
    • Power - Max: 1.47W
    • Transistor Type: 7 NPN Darlington
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
    • Current - Collector Cutoff (Max): 50µA
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • ULN2803APG,CN
    TRANS 8NPN DARL 50V 0.5A 18DIP
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 85°C (TA)
    • Package / Case: 18-DIP (0.300", 7.62mm)
    • Supplier Device Package: 18-DIP
    • Power - Max: 1.47W
    • Transistor Type: 8 NPN Darlington
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • DXTC3C100PD-13
    SS LOW SAT TRANSISTOR POWERDI506
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: PowerDI5060-8 (Type UXD)
    • Power - Max: 1.47W
    • Transistor Type: NPN, PNP
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A, 325mV @ 200mA, 2A
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 130MHz, 100MHz
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100