- Power - Max
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Operating Temperature
|
Supplier Device Package
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DXTN3C100PD-13 | PWR LOW SAT TRANSISTOR POWERDI50 | Diodes Incorporated | 8-PowerTDFN | 3A | 100V | 1.47W | Surface Mount | 2 NPN (Dual) | -55°C ~ 150°C (TJ) | PowerDI5060-8 (Type UXD) | 330mV @ 300mA, 3A | 100nA | 150 @ 500mA, 10V | 130MHz |
| DXTC3C100PD-13 | SS LOW SAT TRANSISTOR POWERDI506 | Diodes Incorporated | 8-PowerTDFN | 3A | 100V | 1.47W | Surface Mount | NPN, PNP | -55°C ~ 150°C (TJ) | PowerDI5060-8 (Type UXD) | 330mV @ 300mA, 3A, 325mV @ 200mA, 2A | 100nA | 150 @ 500mA, 10V / 170 @ 500mA, 10V | 130MHz, 100MHz |
| ULN2803APG,CN | TRANS 8NPN DARL 50V 0.5A 18DIP | Toshiba Semiconductor and Storage | 18-DIP (0.300", 7.62mm) | 500mA | 50V | 1.47W | Through Hole | 8 NPN Darlington | -40°C ~ 85°C (TA) | 18-DIP | 1.6V @ 500µA, 350mA | 1000 @ 350mA, 2V | ||
| ULN2004APG,C,N | IC PWR RELAY 7NPN 1:1 16DIP | Toshiba Semiconductor and Storage | 16-DIP (0.300", 7.62mm) | 500mA | 50V | 1.47W | Through Hole | 7 NPN Darlington | -40°C ~ 85°C (TA) | 16-DIP | 1.6V @ 500µA, 350mA | 50µA | 1000 @ 350mA, 2V |
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