Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 125W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 135
  • MJW21192
    TRANS NPN 150V 8A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 8A
    • Voltage - Collector Emitter Breakdown (Max): 150V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
    • Current - Collector Cutoff (Max): 10µA
    • Frequency - Transition: 4MHz
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  • TIP35B
    TRANS NPN 80V 25A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
    • Frequency - Transition: 3MHz
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  • TIP140G
    TRANS NPN DARL 60V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • MJE4353G
    TRANS PNP 160V 16A SOT93
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: SOT-93
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 16A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
    • Current - Collector Cutoff (Max): 750µA
    • Frequency - Transition: 1MHz
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  • TIP142
    T-NPN SI- PO DARLINGTON
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TIP35A
    TRANS NPN 60V 25A TO218
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
    • Frequency - Transition: 3MHz
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  • TIP145
    TRANS PNP 60V 10A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TIP36C
    TRANS PNP 100V 25A SOT93
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: SOT-93
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 3MHz
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  • TIP36C SL
    TRANS PNP 100V 25A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
    • Frequency - Transition: 3MHz
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  • TIP35A
    TRANS NPN 60V 25A TO218
    Motorola
    • Manufacturer: Motorola
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
    • Frequency - Transition: 3MHz
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  • TIP142G
    TRANS NPN DARL 100V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • TIP141G
    TRANS NPN DARL 80V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • JANTXV2N6306
    TRANS NPN 250V 8A TO204AA
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/498
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204AA (TO-3)
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 8A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
    • Current - Collector Cutoff (Max): 50µA
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  • TIP36CG
    TRANS PNP 100V 25A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 3MHz
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  • JANTXV2N6308
    TRANS NPN 350V 8A TO204AA
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/498
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204AA (TO-3)
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 8A
    • Voltage - Collector Emitter Breakdown (Max): 350V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
    • Current - Collector Cutoff (Max): 50µA
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