- Power - Max
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
-
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 4MHz
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-
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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-
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/498
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
- Current - Collector Cutoff (Max): 50µA
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- Manufacturer: NTE Electronics, Inc
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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- Manufacturer: WeEn Semiconductors
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A
- Current - Collector Cutoff (Max): 100µA
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Frequency - Transition: 3MHz
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50A
- Voltage - Collector Emitter Breakdown (Max): 100V
Info from the market- Total warehouses:
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-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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-
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 12A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 20MHz
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- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-218-3 Isolated Tab, TO-218AC
- Supplier Device Package: TO-218 Isolated
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 15A
- Current - Collector Cutoff (Max): 3mA
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- Manufacturer: NTE Electronics, Inc
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Frequency - Transition: 3MHz
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- Offers in stock:
-
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Frequency - Transition: 60MHz
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 14A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 50MHz
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Frequency - Transition: 60MHz
Info from the market- Total warehouses:
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- Offers in stock:
- 10
- 15
- 50
- 100