Transistors - Bipolar (BJT) - Single Pmax 125W | Transistors

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Found: 135

D64ES5

TRANS NPN DARL 400V 20A TO3

Harris Corporation
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 125W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 30A
- Current - Collector Cutoff (Max): 1mA
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MJE4343G

TRANS NPN 160V 16A TO247-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
- Current - Collector Cutoff (Max): 750µA
- Frequency - Transition: 1MHz
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JANTX2N6306

TRANS NPN 250V 8A TO204AA

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/498
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
- Current - Collector Cutoff (Max): 50µA
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TIP36

TRANS PNP 40V 25A TO218

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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TIP35C SL

TRANS NPN 100V 25A TO218

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Frequency - Transition: 3MHz
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BDV64BG

TRANS PNP DARL 100V 10A TO247-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
- Current - Collector Cutoff (Max): 1mA
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JAN2N6306

TRANS NPN 250V 8A TO204AA

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/498
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
- Current - Collector Cutoff (Max): 50µA
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BDV64B

TRANS PNP DARL 100V 10A TO-218

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Frequency - Transition: 60MHz
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MJW21191G

POWER BIPOLAR TRANSISTOR, PNP

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 4MHz
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TIP35C

TRANS NPN 100V 25A TO247-3

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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TIP142

TRANS NPN DARL 100V 10A TO247-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
- Current - Collector Cutoff (Max): 2mA
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TIP36B SL

TRANS PNP 80V 25A TO218

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
- Frequency - Transition: 3MHz
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TIP146

TRANS PNP 80V 10A TO218

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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TIP147

TRANS PNP DARL 100V 10A TO247-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
- Current - Collector Cutoff (Max): 2mA
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TIP35AG

TRANS NPN 60V 25A TO247-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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