Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 1.2W
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-4
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 75MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 125MHz
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 18V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 200MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- Frequency - Transition: 190MHz
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: 5-CPH
- Power - Max: 1.2W
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 380MHz
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92L
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 200MHz
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- Manufacturer: Sanyo
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: 5-CPH
- Power - Max: 1.2W
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 40V, 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 75mA, 1.5A
- Frequency - Transition: 400MHz
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 150MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
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- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 140MHz
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 150MHz
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 50V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 30mA
- Frequency - Transition: 140MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 90MHz
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- Offers in stock:
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- 100