- Power - Max
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
-
- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 175MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 110MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 220V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- Frequency - Transition: 300MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: 5-CPH
- Power - Max: 1.2W
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V, 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 420MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 140MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 155MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 130MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 110MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 150mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
- Frequency - Transition: 200MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 155MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 155MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Power - Max: 1.2W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 250MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 140MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100