- Power - Max
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
-
- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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-
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 250mA, 5A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- Frequency - Transition: 125MHz
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-
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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-
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
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-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Frequency - Transition: 120MHz
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- Manufacturer: Nexperia USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- Frequency - Transition: 50MHz
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-
- Manufacturer: Nexperia USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- Frequency - Transition: 60MHz
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-
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 100MHz
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-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 1.5GHz
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-
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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-
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 130MHz
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-
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
- Power - Max: 1.2W
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 5mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- Frequency - Transition: 60MHz
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- Offers in stock:
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-4
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 75MHz
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-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
- Frequency - Transition: 70MHz
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-
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
- Current - Collector Cutoff (Max): 50nA
- Frequency - Transition: 80MHz
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100