Found: 238
  • TRANS PNP 20V 2A SOT23-3 T&R
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 2A
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS NPN 50V 5A SOT23-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 170mV @ 250mA, 5A
    • Current - Collector Cutoff (Max): 20nA (ICBO)
    • Frequency - Transition: 125MHz
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  • TRANS NPN 200V 5A TO5
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/455
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AA, TO-5-3 Metal Can
    • Supplier Device Package: TO-5
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
    • Current - Collector Cutoff (Max): 200nA
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  • TRANS PNP 40V 3A SOT223-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223-3
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
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  • TRANS NPN 100V 0.5A TO126B-A1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126B-A1
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
    • Frequency - Transition: 120MHz
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  • TRANS NPN 300V 0.1A SOT223
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
    • Current - Collector Cutoff (Max): 20nA (ICBO)
    • Frequency - Transition: 50MHz
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  • TRANS NPN 300V 0.1A SOT223
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
    • Current - Collector Cutoff (Max): 10nA (ICBO)
    • Frequency - Transition: 60MHz
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  • TRANS NPN 25V 5A E-LINE
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 200°C (TJ)
    • Package / Case: E-Line-3
    • Supplier Device Package: E-Line (TO-92 compatible)
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 25V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
    • Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 5A
    • Current - Collector Cutoff (Max): 50nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TRANS PNP 20V 0.3A TO126
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 300mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 1.5GHz
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  • TRANS NPN 200V 5A TO5
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/455
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AA, TO-5-3 Metal Can
    • Supplier Device Package: TO-5
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 5A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
    • Current - Collector Cutoff (Max): 200nA
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  • TRANS NPN 100V 4A E-LINE
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 200°C (TJ)
    • Package / Case: E-Line-3
    • Supplier Device Package: E-Line (TO-92 compatible)
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 4A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
    • Current - Collector Cutoff (Max): 50nA (ICBO)
    • Frequency - Transition: 130MHz
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  • TRANS 2NPN 50MA 30V TO78-6
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-78-6 Metal Can
    • Supplier Device Package: TO-78-6
    • Power - Max: 1.2W
    • Transistor Type: 2 NPN (Dual)
    • Current - Collector (Ic) (Max): 50mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 5mA
    • Current - Collector Cutoff (Max): 10nA (ICBO)
    • Frequency - Transition: 60MHz
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  • TRANS NPN 60V 4A SOT223-4
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223-4
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 4A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 75MHz
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  • TRANS PNP 150V 0.05A TO126B-A1
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126B-A1
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 50mA
    • Voltage - Collector Emitter Breakdown (Max): 150V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
    • Frequency - Transition: 70MHz
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  • PWR HI VOLTAGE TRANSISTOR EP3 AM
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 200°C (TJ)
    • Package / Case: E-Line-3, Formed Leads
    • Supplier Device Package: E-Line (TO-92 compatible)
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 3A
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
    • Current - Collector Cutoff (Max): 50nA
    • Frequency - Transition: 80MHz
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