Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 130W

Found: 41
  • TRANS PNP DARL 80V 25A TO247-3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 130W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
    • Current - Collector Cutoff (Max): 500µA
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  • TRANS PNP 250V 17A TO3P
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 130W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 17A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • TRANS NPN 250V 17A TO3PN
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -50°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Power - Max: 130W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 17A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • TRANS PNP 250V 17A TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 130W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 17A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • TRANS PNP DARL 100V 15A TO218-3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-218-3, TO-218AC
    • Supplier Device Package: TO-218-3
    • Power - Max: 130W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN DARL 80V 25A TO247-3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 130W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
    • Current - Collector Cutoff (Max): 500µA
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  • TRANS NPN 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P(N)
    • Power - Max: 130W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • 2SA1962 - POWER BIPOLAR TRANSIST
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 130W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 17A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • TRANS NPN 180V 15A TO3P
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 130W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 180V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 50MHz
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  • TRANS PNP 100V 15A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 130W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
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  • TRANS NPN DARL 80V 25A TO247-3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 130W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 25A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
    • Current - Collector Cutoff (Max): 500µA
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  • TRANS PNP 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P(N)
    • Power - Max: 130W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • TRANS PNP 230V 15A TO3P
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 130W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 35MHz
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  • TRANS NPN 100V 15A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 130W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
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  • TRANS NPN 250V 17A TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 130W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 17A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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