Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 150W

Found: 139
  • TRANS NPN DARL 150V 12A MT-200
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-ESIP
    • Supplier Device Package: MT-200
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 150V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 55MHz
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  • TRANS NPN 100V 7.5A TO82
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/102
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Supplier Device Package: TO-82
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 7.5A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN 200V 7.5A TO82
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Supplier Device Package: TO-82
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 7.5A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 7.5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3PL
    • Supplier Device Package: TO-3P(L)
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • T-PNP SI-AF PO
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204 (TO-3)
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 16A
    • Voltage - Collector Emitter Breakdown (Max): 140V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
    • Current - Collector Cutoff (Max): 10mA
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  • TRANS PNP 300V 8A TO3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 8A
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 8A, 300V
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  • T-NPN SI- PWR AUDIO SW
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204 (TO-3)
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 16A
    • Voltage - Collector Emitter Breakdown (Max): 140V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 10mA
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  • TRANS NPN DARL 80V 12A TO-3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/502
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN DARL 350V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 350V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
    • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
    • Current - Collector Cutoff (Max): 100µA
    • Frequency - Transition: 2MHz
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  • TRANS NPN 200V 15A MT-200
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-ESIP
    • Supplier Device Package: MT-200
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 20MHz
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  • TRANS NPN DARL 100V 16A TO3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Chassis Mount
    • Operating Temperature: 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 16A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 16A
    • Current - Collector Cutoff (Max): 3mA
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  • TRANS PNP 250V 17A TO264-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -50°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264-3
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 17A
    • Voltage - Collector Emitter Breakdown (Max): 250V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • TRANS NPN DARL 200V 15A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 3MHz
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  • TRANS PNP 60V 10A TO-3
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Frequency - Transition: 4MHz
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  • TRANS NPN 60V 30A TO218-3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218-3
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 4A, 40A
    • Frequency - Transition: 8MHz
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