Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single Pmax 150W
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-ESIP
- Supplier Device Package: MT-200
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 55MHz
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/102
- Operating Temperature: -65°C ~ 150°C (TJ)
- Supplier Device Package: TO-82
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Microsemi Corporation
- Operating Temperature: -65°C ~ 150°C (TJ)
- Supplier Device Package: TO-82
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7.5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 7.5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: NTE Electronics, Inc
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
- Current - Collector Cutoff (Max): 10mA
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- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 8A, 300V
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- Manufacturer: NTE Electronics, Inc
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 800mA, 8A
- Current - Collector Cutoff (Max): 10mA
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/502
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 2MHz
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-ESIP
- Supplier Device Package: MT-200
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 20MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 3V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 16A
- Current - Collector Cutoff (Max): 3mA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -50°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264-3
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 17A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Frequency - Transition: 4MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 4A, 40A
- Frequency - Transition: 8MHz
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- Offers in stock:
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