Transistors - Bipolar (BJT) - Single Pmax 150W | Transistors

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Found: 139

BUH150G

TRANS NPN 700V 15A TO220

onsemi
- Manufacturer: onsemi
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 23MHz
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JAN2N6051

TRANS PNP DARL 80V 12A TO3

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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2N6052

T-PNP SI-DARLINGTON AMP

NTE Electronics, Inc
- Manufacturer: NTE Electronics, Inc
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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KSC3552OTU

TRANS NPN 800V 12A TO3P

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 15MHz
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JANTXV2N6051

TRANS PNP DARL 80V 12A TO-3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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BUV98AV

TRANS NPN 450V 30A ISOTOP

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Chassis Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: ISOTOP
- Supplier Device Package: ISOTOP®
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 24A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 24A
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ESM4045DV

TRANS NPN DARL 450V 42A ISOTOP

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Chassis Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: ISOTOP
- Supplier Device Package: ISOTOP®
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 42A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 35A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2A, 35A
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TTC5200(Q)

TRANS NPN 230V 15A TO3P

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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RCA8766

TRANS NPN DARL 350V 10A TO3

Harris Corporation
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 6A
- Current - Collector Cutoff (Max): 1mA
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2N6671

TRANS PNP 300V 8A TO-3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 8A, 300V
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BUX14

TRANS NPN 400V 10A TO3

Harris Corporation
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 1.5mA
- Frequency - Transition: 8MHz
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BU323Z

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 2MHz
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BUH150

TRANS NPN 700V 15A TO220

onsemi
- Manufacturer: onsemi
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 23MHz
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2SA1943N(S1,E,S)

TRANS PNP 230V 15A TO3P

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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2N3792 PBFREE

TRANS PNP 80V 10A TO-3

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Frequency - Transition: 4MHz
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