• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Tolerance: ±2%
• Power - Max: 1.5W
• Voltage - Zener (Nom) (Vz): 5.6V
• Impedance (Max) (Zzt): 2 Ohms

• Manufacturer: Microsemi Corporation
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 175°C
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Current - Reverse Leakage @ Vr: 10nA @ 21.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Voltage - Zener (Nom) (Vz): 28V

• Manufacturer: Global Power Technology Co. Ltd
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220F
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 9A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 123pF @ 0V, 1MHz
• Operating Temperature - Junction: -55°C ~ 175°C

• Manufacturer: Taiwan Semiconductor Corporation
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Operating Temperature - Junction: -55°C ~ 150°C

• Manufacturer: Comchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0503 (1308 Metric)
• Supplier Device Package: 0503/SOD-723F
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 100nA @ 14V
• Tolerance: ±2%
• Power - Max: 150mW
• Voltage - Zener (Nom) (Vz): 18V
• Impedance (Max) (Zzt): 42 Ohms

• Manufacturer: Rohm Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Tolerance: ±2%
• Power - Max: 250mW
• Voltage - Zener (Nom) (Vz): 10V
• Impedance (Max) (Zzt): 20 Ohms

• Manufacturer: Microchip Technology

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4.4ns
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Operating Temperature - Junction: 175°C (Max)

• Manufacturer: Vishay General Semiconductor - Diodes Division
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Operating Temperature - Junction: -55°C ~ 150°C

• Manufacturer: NTE Electronics, Inc
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C
• Package / Case: T-18, Axial
• Supplier Device Package: Axial
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Current - Reverse Leakage @ Vr: 500nA @ 21.2V
• Tolerance: ±5%
• Power - Max: 5W
• Voltage - Zener (Nom) (Vz): 28V
• Impedance (Max) (Zzt): 6 Ohms

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 175°C
• Package / Case: Die
• Supplier Device Package: Die
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Current - Reverse Leakage @ Vr: 10nA @ 32.6V
• Tolerance: ±5%
• Power - Max: 500mW
• Voltage - Zener (Nom) (Vz): 43V

• Manufacturer: NTE Electronics, Inc

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220F-2FS
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 650V
• Capacitance @ Vr, F: 463pF @ 1V, 100kHz
• Operating Temperature - Junction: -55°C ~ 175°C

• Manufacturer: Microsemi Corporation
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C
• Package / Case: T-18, Axial
• Supplier Device Package: T-18
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Current - Reverse Leakage @ Vr: 500nA @ 33.8V
• Tolerance: ±2%
• Power - Max: 5W
• Voltage - Zener (Nom) (Vz): 47V
• Impedance (Max) (Zzt): 25 Ohms

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 175°C
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Current - Reverse Leakage @ Vr: 5µA @ 900mV
• Tolerance: ±10%
• Power - Max: 500mW
• Voltage - Zener (Nom) (Vz): 3.3V
• Impedance (Max) (Zzt): 26 Ohms