Semiconductors, Diodes Inventchip

Diodes - RF 0
Diodes - Rectifiers - Arrays 10
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 10

IV1D12020T3

SIC DIODE, 1200V 20A(10A/LEG), T

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 30A (DC)
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IV1D12015T2

SIC DIODE, 1200V 15A, TO-247-2

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 44A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 1200V
- Capacitance @ Vr, F: 888pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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IV1D12040U2

SIC DIODE, 1200V 40A, TO-247-2

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 102A (DC)
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IV1D12005O2

SIC DIODE, 1200V 5A, TO-220-2

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 17A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 1200V
- Capacitance @ Vr, F: 320pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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IV1D06006P3

SIC DIODE, 650V 6A, DPAK

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 16.7A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 10µA @ 650V
- Capacitance @ Vr, F: 224pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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IV1D12010T2

SIC DIODE, 1200V 10A, TO-247-2

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 30A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 575pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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IV1D12010O2

SIC DIODE, 1200V 10A, TO-220-2

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 28A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 575pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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IV1D12020T2

SIC DIODE, 1200V 20A, TO-247-2

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 54A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 120µA @ 1200V
- Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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IV1D12030U3

SIC DIODE, 1200V 30A(15A/LEG), T

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 44A (DC)
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IV1D06006O2

SIC DIODE, 650V 6A, TO-220-2

Inventchip
- Manufacturer: Inventchip
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 17.4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 10µA @ 650V
- Capacitance @ Vr, F: 212pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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