Semiconductors, Diodes Infineon Technologies
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- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 15A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 360µA @ 1200V
- Capacitance @ Vr, F: 750pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 650A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 450A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 800V
- Operating Temperature - Junction: -40°C ~ 180°C
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Operating Temperature - Junction: -40°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Operating Temperature: 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2-1
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
- Current - Max: 100mA
- Power Dissipation (Max): 250mW
- Voltage - Peak Reverse (Max): 50V
- Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Diode Type: 1 Pair Common Cathode
- Capacitance @ Vr, F: 13pF @ 8V, 1MHz
- Voltage - Peak Reverse (Max): 18V
- Capacitance Ratio: 3.8
- Capacitance Ratio Condition: C2/C8
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 52.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 126ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Operating Temperature - Junction: -40°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 690A
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 3000A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 9µs
- Current - Reverse Leakage @ Vr: 25mA @ 2000V
- Operating Temperature - Junction: -40°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 70mA (DC)
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- Manufacturer: Infineon Technologies
- Series: DD230S
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
- Diode Type: Single
- Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
- Voltage - Peak Reverse (Max): 30V
- Capacitance Ratio: 9.8
- Capacitance Ratio Condition: C1/C28
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: DO-200AC, K-PUK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4300V
- Current - Average Rectified (Io): 1800A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100mA @ 4300V
- Operating Temperature - Junction: -40°C ~ 160°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 25A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 25A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Infineon Technologies
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- Offers in stock:
- 10
- 15
- 50
- 100