Semiconductors, Diodes MICROSS/On Semiconductor
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- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: MICROSS/On Semiconductor
- Operating Temperature: -65°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Die
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Current - Reverse Leakage @ Vr: 10µA @ 12.6V
- Tolerance: ±5%
- Power - Max: 500mW
- Voltage - Zener (Nom) (Vz): 14V
- Impedance (Max) (Zzt): 100 Ohms
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- Manufacturer: MICROSS/On Semiconductor
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- Manufacturer: MICROSS/On Semiconductor
- Series: Automotive, AEC-Q101
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 25nA @ 20V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: MICROSS/On Semiconductor
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 50mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 50mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 700ns
- Current - Reverse Leakage @ Vr: 50nA @ 20V
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Operating Temperature - Junction: 175°C (Max)
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- Manufacturer: MICROSS/On Semiconductor
- Series: Automotive, AEC-Q101
- Operating Temperature: -65°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Die
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Current - Reverse Leakage @ Vr: 2µA @ 2V
- Tolerance: ±5%
- Power - Max: 1W
- Voltage - Zener (Nom) (Vz): 5.1V
- Impedance (Max) (Zzt): 60 Ohms
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- Manufacturer: MICROSS/On Semiconductor
- Mounting Type: Through Hole
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: MICROSS/On Semiconductor
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- Offers in stock:
- 10
- 15
- 50
- 100