Semiconductors, Diodes GeneSiC Semiconductor

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 2090
  • MURH10040R
    DIODE GEN PURP 400V 100A D-67
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: D-67
    • Supplier Device Package: D-67
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 100A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 90ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
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  • MURF30060
    DIODE GEN PURP 600V 150A TO244
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 25µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • MBR200100CTS
    DIODE MODULE 100V 200A SOT227
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Screw Mount
    • Package / Case: SOT-227-4
    • Supplier Device Package: SOT-227
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 950mV @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 80V
    • Operating Temperature - Junction: -40°C ~ 175°C
    • Diode Configuration: 2 Independent
    • Current - Average Rectified (Io) (per Diode): 200A (DC)
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  • MBRT40035RL
    DIODE SCHOTTKY 35V 200A 3 TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 35V
    • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 3mA @ 35V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 200A
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  • MBRT60035
    DIODE MODULE 35V 300A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 35V
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 300A
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  • MBR7530R
    DIODE SCHOTTKY REV 30V DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Schottky, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 75A
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 75A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 30V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • MBRTA80060
    DIODE SCHOTTKY 60V 400A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 60V
    • Voltage - Forward (Vf) (Max) @ If: 780mV @ 400A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 60V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 400A
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  • MBRH12080R
    DIODE SCHOTTKY 80V 120A D-67
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: D-67
    • Supplier Device Package: D-67
    • Diode Type: Schottky, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Current - Average Rectified (Io): 120A
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 4mA @ 20V
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  • MURT10060R
    DIODE ARRAY GP REV POLAR 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 50A
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  • GKR71/08
    DIODE GEN PURP 800V 95A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 95A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10mA @ 800V
    • Operating Temperature - Junction: -40°C ~ 180°C
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  • MURF30020
    DIODE GEN PURP 200V 150A TO244
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 25µA @ 200V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 150A
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  • MUR10060CTR
    DIODE MODULE 600V 50A 2TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Twin Tower
    • Supplier Device Package: Twin Tower
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 110ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 50A
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  • MBR3530
    DIODE SCHOTTKY 30V 35A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 35A
    • Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1.5mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • MBRT20035
    DIODE MODULE 35V 100A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 35V
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 100A
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  • MURTA60060
    DIODE MODULE 600V 300A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 280ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 300A
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