• Manufacturer
  • Diode Type
  • Supplier Device Package
    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 2090
  • 1N2128A
    DIODE GEN PURP 50V 60A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 60A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • MBRTA50080R
    DIODE SCHOTTKY 80V 250A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 250A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 80V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 250A
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  • MUR7020R
    DIODE GEN PURP REV 200V 70A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 70A
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • MSRTA300120(A)D
    DIODE MODULE 1.2KV 300A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 25µA @ 200V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 300A (DC)
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  • KBPC5004T
    BRIDGE RECT 1PHASE 400V 50A KBPC
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: QC Terminal
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-Square, KBPC-T
    • Supplier Device Package: KBPC
    • Diode Type: Single Phase
    • Current - Average Rectified (Io): 50A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
    • Current - Reverse Leakage @ Vr: 5µA @ 400V
    • Technology: Standard
    • Voltage - Peak Reverse (Max): 400V
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  • MBRF500150
    DIODE SCHOTTKY 150V 250A TO244AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: TO-244AB
    • Supplier Device Package: TO-244AB
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 150V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 250A
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  • GBPC2508W
    BRIDGE RECT 1P 800V 25A GBPC-W
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-Square, GBPC-W
    • Supplier Device Package: GBPC-W
    • Diode Type: Single Phase
    • Current - Average Rectified (Io): 25A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.2A
    • Current - Reverse Leakage @ Vr: 5µA @ 800V
    • Technology: Standard
    • Voltage - Peak Reverse (Max): 800V
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  • FR70B05
    DIODE GEN PURP 100V 70A DO5
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AB, DO-5, Stud
    • Supplier Device Package: DO-5
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 70A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -40°C ~ 125°C
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  • FST7340M
    DIODE SCHOTTKY 40V 35A D61-3M
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: D61-3M
    • Supplier Device Package: D61-3M
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Voltage - Forward (Vf) (Max) @ If: 700mV @ 35A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 40V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 35A
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  • GBPC5010T
    BRIDGE RECT 1PHASE 1KV 50A GBPC
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: QC Terminal
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-Square, GBPC
    • Supplier Device Package: GBPC
    • Diode Type: Single Phase
    • Current - Average Rectified (Io): 50A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
    • Current - Reverse Leakage @ Vr: 5µA @ 1000V
    • Technology: Standard
    • Voltage - Peak Reverse (Max): 1kV
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  • S150K
    DIODE GEN PURP 800V 150A DO205AA
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-205AA, DO-8, Stud
    • Supplier Device Package: DO-205AA (DO-8)
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 150A
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • FR16G02
    DIODE GEN PURP 400V 16A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 16A
    • Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • MBRT400100
    DIODE MODULE 100V 200A 3TOWER
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: Three Tower
    • Supplier Device Package: Three Tower
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 200A
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  • MBRH12020R
    DIODE SCHOTTKY 20V 120A D-67
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Package / Case: D-67
    • Supplier Device Package: D-67
    • Diode Type: Schottky, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 20V
    • Current - Average Rectified (Io): 120A
    • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 4mA @ 20V
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  • BR106
    BRIDGE RECT 1P 600V 10A BR-10
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-Square, BR-10
    • Supplier Device Package: BR-10
    • Diode Type: Single Phase
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Technology: Standard
    • Voltage - Peak Reverse (Max): 600V
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